含IV组SiGeSn合金的多结太阳能电池

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905233

P. Caño, I. Lombardero, I. Rey‐Stolle, Andrew J. Johnson, R. Hoffman

{"title":"含IV组SiGeSn合金的多结太阳能电池","authors":"P. Caño, I. Lombardero, I. Rey‐Stolle, Andrew J. Johnson, R. Hoffman","doi":"10.1109/CDE.2017.7905233","DOIUrl":null,"url":null,"abstract":"In order to get higher efficiencies in multijunction solar cells, a 1eV material lattice matched to germanium has been searched tenaciously for years. In this context, a hybrid III–V/IV multijunction and single junction solar cells incorporating 1eV SiGeSn alloy are presented. A basic characterization of these solar cells, which has been grown by CVD and subsequent MOCVD, has been carried out.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Multijunction solar cells incorporating group IV SiGeSn alloys\",\"authors\":\"P. Caño, I. Lombardero, I. Rey‐Stolle, Andrew J. Johnson, R. Hoffman\",\"doi\":\"10.1109/CDE.2017.7905233\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to get higher efficiencies in multijunction solar cells, a 1eV material lattice matched to germanium has been searched tenaciously for years. In this context, a hybrid III–V/IV multijunction and single junction solar cells incorporating 1eV SiGeSn alloy are presented. A basic characterization of these solar cells, which has been grown by CVD and subsequent MOCVD, has been carried out.\",\"PeriodicalId\":421205,\"journal\":{\"name\":\"2017 Spanish Conference on Electron Devices (CDE)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Spanish Conference on Electron Devices (CDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2017.7905233\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2017.7905233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

为了在多结太阳能电池中获得更高的效率，一种与锗相匹配的1eV材料晶格已经被顽强地寻找了多年。在此背景下，提出了一种含有1eV SiGeSn合金的III-V /IV多结和单结混合太阳能电池。通过CVD和随后的MOCVD对这些太阳能电池进行了基本表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Multijunction solar cells incorporating group IV SiGeSn alloys

In order to get higher efficiencies in multijunction solar cells, a 1eV material lattice matched to germanium has been searched tenaciously for years. In this context, a hybrid III–V/IV multijunction and single junction solar cells incorporating 1eV SiGeSn alloy are presented. A basic characterization of these solar cells, which has been grown by CVD and subsequent MOCVD, has been carried out.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 Spanish Conference on Electron Devices (CDE)

自引率

0.00%

发文量