隧道场效应管和冲击电离场效应管III-V PIN二极管的蒙特卡罗分析

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905210

B. G. Vasallo, V. Talbo, T. González, Y. Lechaux, N. Wichmann, S. Bollaert, J. Mateos

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引用次数: 3

摘要

冲击电离(II)金属氧化物半导体场效应管(i - mosfet)和隧道场效应管(tfet)作为有前途的器件正在被探索，以实现低功耗逻辑电路的最佳性能。为了从物理角度方便这些器件的设计过程，提出了一个包含冲击电离事件和带间隧穿的蒙特卡罗模型。我们的MC模拟器可以重现实验用的In0.53Ga0.47As非门控100 nm PIN二极管的I-V特性。与冲击电离事件相比，较低的施加电压会产生隧道效应，因此发现它们适用于TFET结构。

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Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

III–V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices to achieve the best behavior for low power logical circuits. To facilitate the design process of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization events and band-to-band tunneling is presented. Our MC simulator can reproduce the I–V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes. The tunneling emerges for lower applied voltages than impact ionization events, so that they are found to be appropriate for TFET structures.

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2017 Spanish Conference on Electron Devices (CDE)

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