{"title":"RF noise model for AlGaN/GaN HEMT","authors":"W. E. Muhea, A. Lázaro, B. Iñíguez, F. M. Yigletu","doi":"10.1109/CDE.2017.7905237","DOIUrl":null,"url":null,"abstract":"This letter presents an RF noise model for AlGaN/GaN HEMTs. The model is based on active line approach and concept of two ports linear noise theory. Short channel effects such as channel length modulation and velocity saturation are considered in the model. The noise generated from the pinch off region is taken into account as well. Some of FET noise parameters are calculated and experimentally verified.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2017.7905237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This letter presents an RF noise model for AlGaN/GaN HEMTs. The model is based on active line approach and concept of two ports linear noise theory. Short channel effects such as channel length modulation and velocity saturation are considered in the model. The noise generated from the pinch off region is taken into account as well. Some of FET noise parameters are calculated and experimentally verified.