RF noise model for AlGaN/GaN HEMT

W. E. Muhea, A. Lázaro, B. Iñíguez, F. M. Yigletu
{"title":"RF noise model for AlGaN/GaN HEMT","authors":"W. E. Muhea, A. Lázaro, B. Iñíguez, F. M. Yigletu","doi":"10.1109/CDE.2017.7905237","DOIUrl":null,"url":null,"abstract":"This letter presents an RF noise model for AlGaN/GaN HEMTs. The model is based on active line approach and concept of two ports linear noise theory. Short channel effects such as channel length modulation and velocity saturation are considered in the model. The noise generated from the pinch off region is taken into account as well. Some of FET noise parameters are calculated and experimentally verified.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2017.7905237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This letter presents an RF noise model for AlGaN/GaN HEMTs. The model is based on active line approach and concept of two ports linear noise theory. Short channel effects such as channel length modulation and velocity saturation are considered in the model. The noise generated from the pinch off region is taken into account as well. Some of FET noise parameters are calculated and experimentally verified.
AlGaN/GaN HEMT的射频噪声模型
本文介绍了AlGaN/GaN hemt的射频噪声模型。该模型基于有源线方法和双端口线性噪声理论的概念。模型中考虑了信道长度调制和速度饱和等短信道效应。同时考虑了掐断区产生的噪声。对FET的一些噪声参数进行了计算和实验验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信