AlGaN/GaN HEMT的射频噪声模型

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905237

W. E. Muhea, A. Lázaro, B. Iñíguez, F. M. Yigletu

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引用次数: 0

摘要

本文介绍了AlGaN/GaN hemt的射频噪声模型。该模型基于有源线方法和双端口线性噪声理论的概念。模型中考虑了信道长度调制和速度饱和等短信道效应。同时考虑了掐断区产生的噪声。对FET的一些噪声参数进行了计算和实验验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RF noise model for AlGaN/GaN HEMT

This letter presents an RF noise model for AlGaN/GaN HEMTs. The model is based on active line approach and concept of two ports linear noise theory. Short channel effects such as channel length modulation and velocity saturation are considered in the model. The noise generated from the pinch off region is taken into account as well. Some of FET noise parameters are calculated and experimentally verified.

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2017 Spanish Conference on Electron Devices (CDE)

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