Measuring low H field and currents with AMR sensors

Miriam Naranjo-Esparcia, J. Kubík, Pedro Tomás-Molina, J. Calpe, Càndid Reig
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引用次数: 4

Abstract

The growing demand from the automotive industry for high accuracy magnetic sensors and the need to perform high resolution angular position measurements have been the drivers for the industrial research in magnetic sensing technologies. This paper describes the design and characterization of several experimental devices implementing simple magnetoresistive structures targeting contactless current measurement in the tens to hundreds of milliamps range with sub-mA resolution. The ultimate goal is to extend the application area of magnetoresistive sensors beyond their current niche in automotive into more general applications. The initial set of devices tested to-date has shown a sensitivity of 0.18 mV/mA in ±100 mA range when supplied from a 4V supply, which is a close match to the theoretically calculated value of 0.23 mV/mA. The linearity and hysteresis error within the ±100 mA full scale (FS) were better than 2% FS and 0.45% FS respectively, when configured as Wheatstone bridges.
用AMR传感器测量低H场和电流
汽车工业对高精度磁传感器的需求不断增长,以及对高分辨率角度位置测量的需求一直是磁传感技术工业研究的驱动力。本文描述了几个实验装置的设计和特性,这些装置实现了简单的磁阻结构,目标是在数十到数百毫安范围内以亚毫安分辨率进行非接触电流测量。最终目标是将磁阻传感器的应用领域从目前的汽车领域扩展到更广泛的应用领域。迄今为止测试的初始器件在±100 mA范围内的灵敏度为0.18 mV/mA,当由4V电源供电时,这与理论计算值0.23 mV/mA非常接近。当配置惠斯通电桥时,在±100 mA满量程(FS)内的线性和滞后误差分别优于2% FS和0.45% FS。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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