经典分子动力学模拟生成非晶硅的表征

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905213

I. Santos, P. López, M. Aboy, L. Marqués, L. Pelaz

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引用次数: 1

摘要

我们使用经典分子动力学模拟对非晶硅的能量和结构特征进行了表征。我们用不同的方法制备了非晶硅样品:淬火液态硅，积累随后的高能反冲产生的损伤，积累点缺陷。分析了这两种样品的能量和结构特征，以阐明哪一种工艺能提供更真实的a- si结构。

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Characterization of amorphous Si generated through classical molecular dynamics simulations

We performed a characterization of the energetic and structural features of amorphous Si using classical molecular dynamics simulations. We generated amorphous Si samples from different procedures: quenching liquid silicon, accumulating the damage generated by subsequent energetic recoils, and accumulating point defects. The obtained energetic and structural features of these types of samples are analyzed to elucidate which procedure provides a more realistic a-Si structure.

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2017 Spanish Conference on Electron Devices (CDE)

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