Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells

Abstract

Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown samples using N2 as process gas increase the external quantum efficiency while using H2 as process gas degrades the solar cell performance. Best performance is obtained by in situ annealing in a molecular beam epitaxy reactor. External quantum efficiency increases in the short wavelength range (≤ 700 nm) and decreases in the long wavelength range (≥ 700 nm) after ex situ annealing using N2 as process gas on in situ annealed samples (in a molecular beam epitaxy reactor).