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Love wave toluene sensor based on multi-guiding layers 基于多导层的Love波甲苯传感器
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905219
D. Matatagui, M. Fernández, J. Fontecha, J.P. Santos, I. Sayago, M. C. Horrillo, I. Gràcia, J. Lozano
{"title":"Love wave toluene sensor based on multi-guiding layers","authors":"D. Matatagui, M. Fernández, J. Fontecha, J.P. Santos, I. Sayago, M. C. Horrillo, I. Gràcia, J. Lozano","doi":"10.1109/CDE.2017.7905219","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905219","url":null,"abstract":"A novel Love-wave sensor based on multi-guiding layers, SiO2 layer and indium tin oxide (ITO) nanoparticle layer, was developed. The ITO nanoparticles worked as guiding and sensitive layers at the same time. The interaction between ITO nanoparticles and toluene molecules produced changes in elastic properties of nanoparticles and consequently the sensor suffered a proportional frequency shift for each toluene concentration. The Love wave multi-guiding layer sensor detected concentrations as low as 1 ppm of toluene.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123561350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon nitride layers for DopLa-IBC solar cells DopLa-IBC太阳能电池用氮化硅层
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905248
J. A. Méndez, I. Martín, G. López, P. Ortega, A. Orpella, R. Alcubilla
{"title":"Silicon nitride layers for DopLa-IBC solar cells","authors":"J. A. Méndez, I. Martín, G. López, P. Ortega, A. Orpella, R. Alcubilla","doi":"10.1109/CDE.2017.7905248","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905248","url":null,"abstract":"In this work, we report on the development of silicon nitride (SiNx) layers to be applied to crystalline silicon high-efficiency solar cells. In particular, our research group has developed the concept of Doped by Laser (DopLa) solar cells where the highly doped regions are based on laser processed dielectric films. This concept has been recently applied to Interdigitated Back-Contacted (IBC) solar cells where some limitations associated to silicon carbide films arisen. The objective is to replace these films by SiNx layers on both the rear and front surface. Focusing on the rear surface, we have determined a SiNx layer that could be etched by conventional wet processes avoiding the plasma etching used in our current devices that degrades their surface passivation. On the other hand, for the front surface we found deposition conditions of SiNx films more transparent than their SiCx counterparts and that could stand the subsequent cleaning procedures included in the solar cell fabrication process. A gain in short-circuit current of 0.1 mA/cm2 is expected.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130482633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices 锁定红外热成像:一种定位和分析电力设备故障的工具
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905234
M. Vellvehí, X. Perpiñà, J. Leon, D. Sánchez, X. Jordà, J. Millán
{"title":"Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices","authors":"M. Vellvehí, X. Perpiñà, J. Leon, D. Sánchez, X. Jordà, J. Millán","doi":"10.1109/CDE.2017.7905234","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905234","url":null,"abstract":"In this work, Lock-in Infrared Thermography (LIT) is presented as a powerful tool for failure analysis in power devices. These devices are electrically characterized in the frequency domain by thermal means to activate weak spots responsible for their misbehavior. As case studies, two different power devices are inspected using the LIT technique: a Vertical Double Diffused MOS (VDMOS) presenting an elevated gate leakage current and a SiC Schottky Barrier Diode with Tungsten contact (W-SBD) presenting a Schottky barrier modification by metal contact change.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126653219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
DC characteristics with substrate temperature for GaN on Si MOS-HEMTs GaN在Si mos - hemt上的直流特性随衬底温度的变化
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905214
R. Rodríguez, B. González, J. García, A. Vega, A. Núñez
{"title":"DC characteristics with substrate temperature for GaN on Si MOS-HEMTs","authors":"R. Rodríguez, B. González, J. García, A. Vega, A. Núñez","doi":"10.1109/CDE.2017.7905214","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905214","url":null,"abstract":"DC characteristics of AlGaN/GaN on Si MOS-HEMTs are measured and numerically simulated, with substrate temperature up to 140°C, varying the gate width and gate length. Different gate recess depths are simulated in ATLAS in order to further investigate and optimize the device performance. Thermal boundary conditions and device thermal resistance are included in the structure for accurate simulation of the heating response. In addition, the relationship of the threshold voltage and saturation velocity with the substrate temperature and gate width has been studied and set in order to ease the modelling of these devices.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121808437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
From materials to devices: Bottom-up integration of nanomaterials onto silicon microstructures for thermoelectric and piezoelectric applications 从材料到器件:纳米材料自下而上集成到热电和压电应用的硅微结构上
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905202
L. Fonseca, C. Calaza, M. Salleras, G. Murillo, J. Esteve, A. Tarancón, Á. Morata, Jose D. Santos, G. Gadea
{"title":"From materials to devices: Bottom-up integration of nanomaterials onto silicon microstructures for thermoelectric and piezoelectric applications","authors":"L. Fonseca, C. Calaza, M. Salleras, G. Murillo, J. Esteve, A. Tarancón, Á. Morata, Jose D. Santos, G. Gadea","doi":"10.1109/CDE.2017.7905202","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905202","url":null,"abstract":"Energy autonomy keeps being one of the most desired enabling functionalities in the context of off-grid applications, such as continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). SiNERGY, a European project (GA n° 604169) coordinated by IMB-CNM (CSIC) has focused on silicon and silicon friendly materials and technologies to explore energy harvesting and storage concepts for powering microsensors nodes. Harvesting energy, tapping into environmentally available sources may be a good solution to overcome the use of primary batteries. 10–100 microwatts per square centimeter power densities seem appropriate for many such applications. Specific thermoelectric and piezoelectric developments are reviewed.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117340281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical transfer equations for the spectral modelling of III–V multi-junction concentrator solar cells III-V型多结聚光太阳能电池光谱建模的解析传递方程
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905241
J. Caballero, E. Fernández, G. Nofuentes, A. Soria-Moya, F. Almonacid, P. Pérez-Higueras, M. Theristis, G. Georghiou, A. García-Loureiro
{"title":"Analytical transfer equations for the spectral modelling of III–V multi-junction concentrator solar cells","authors":"J. Caballero, E. Fernández, G. Nofuentes, A. Soria-Moya, F. Almonacid, P. Pérez-Higueras, M. Theristis, G. Georghiou, A. García-Loureiro","doi":"10.1109/CDE.2017.7905241","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905241","url":null,"abstract":"The varying shape of the direct normal irradiance (DNI) spectrum is mainly determined by air mass (AM), aerosol optical depth (AOD) and precipitable water (PW). Unlike some previous studies that aimed at modelling the spectral impact on photovoltaics (PV), a recently published method takes these parameters into account when modelling spectral effects on concentrating PV. A short review of this method is provided initially in this paper. Then, this work presents the results of an empirical validation for a typical lattice-matched 3J GaInP/GaInAs/Ge solar cell during four specific days selected from a wider 3-month experimental campaign. During this period, spectral DNI measurements were recorded at 5-minute intervals and combined with the spectral response of the CPV solar cell considered to calculate measured values of the spectral factor (SF). Results show how predicted values of SF are in close agreement with measured ones as root mean square error (RMSE) values do not exceed 2% for all the days analysed. Further, negligible values of mean bias error (MBE) are obtained. The best results are obtained in days with moderate values of AOD and PW -RMSE around 0.5%- while modelled values of SF get worse -RMSE slightly less than 2%- in days with extreme values of such parameters. Last, the method investigated here yielded a value of RMSE of 0.8%, which is far below 2.3% obtained by applying the other methods for the whole 3-month period under study.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116714049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A combined Monte Carlo-balance equations investigation of the high frequency response of graphene 石墨烯高频响应的联合蒙特卡罗平衡方程研究
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905207
R. Rengel, J. M. Iglesias, E. Pascual, M. J. Martín
{"title":"A combined Monte Carlo-balance equations investigation of the high frequency response of graphene","authors":"R. Rengel, J. M. Iglesias, E. Pascual, M. J. Martín","doi":"10.1109/CDE.2017.7905207","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905207","url":null,"abstract":"The small signal response and noise temperature in graphene under non-degenerated conditions is evaluated by means of a combined Monte Carlo-balance equations approach. The method correctly predicts the qualitative behavior of the most relevant quantities, such as real part of the differential mobility or diffusion coefficient, being much more computationally efficient that full ensemble Monte Carlo simulations. Several different substrates are investigated, so the effect of surface polar phonons can be disaggregated to determine the most adequate supporting dielectric fo high frequency performance under ideal conditions (no impurities, defects or ripples).","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126984675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MOVPE issues in the development of ordered GaInP metamorphic buffers for multijunction solar cells 多结太阳能电池中有序GaInP变质缓冲发展中的MOVPE问题
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905225
M. Hinojosa, I. García, Oscar Martínez
{"title":"MOVPE issues in the development of ordered GaInP metamorphic buffers for multijunction solar cells","authors":"M. Hinojosa, I. García, Oscar Martínez","doi":"10.1109/CDE.2017.7905225","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905225","url":null,"abstract":"Metamorphic solar cells require high-quality compositional graded buffer (CGB) layers to perform as virtual substrate. Several technical growth issues arisen during the implementation of an ordered-GaInP CGB at IES-UPM MOVPE reactor are discussed in this work. These considerations focuses on achieving high-quality metamorphic buffers by increasing phosphine partial pressure and growth rates, which requires some reactor adjustments, and attaining composition control for different GaInP alloys. Improvements on the material quality are proved. It is also presented a 1 eV GaInAs metamorphic subcell and an inverted metamorphic triple junction solar cell using these CGB.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123590962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influence of Process-Voltage-Temperature variations on the behavior of a hybrid SET-FET circuit 制程电压温度变化对混合型SET-FET电路性能的影响
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905221
E. Amat, J. Bausells, F. Pérez-Murano
{"title":"Influence of Process-Voltage-Temperature variations on the behavior of a hybrid SET-FET circuit","authors":"E. Amat, J. Bausells, F. Pérez-Murano","doi":"10.1109/CDE.2017.7905221","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905221","url":null,"abstract":"This contribution studies the improvements, in terms of performance and variability tolerance, of implementing an hybrid CMOS-SET device when different Field Effect Transistors are regarded, e.g. Nanowire, UTBB FDSOI and FinFET. The Nanowire-based SET-FET presents the highest integration level and a significant increase of drive current and variability mitigation. Moreover, the SET-FET implementation based on UTBB FDSOI allows the use of body-bias voltage and it permits to manage dynamically and more accurately the whole device response.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"150 5 Suppl 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128883997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Active surface potential control in nanostructured MOX layers 纳米结构MOX层的活性表面电位控制
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905212
M. Dominguez-Pumar, L. Kowalski, R. Calavia, E. Llobet
{"title":"Active surface potential control in nanostructured MOX layers","authors":"M. Dominguez-Pumar, L. Kowalski, R. Calavia, E. Llobet","doi":"10.1109/CDE.2017.7905212","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905212","url":null,"abstract":"The objective of the paper is to present the implementation of the first sigma-delta control of Surface Potential (SP) for nanostructured layers made of metal oxides in gas sensors. The objective of this type of controls is to improve the time response and reliability of these sensors. This is done by generating adequate temperature waveforms aiming at generating a constant surface potential in the nanostructures. By enforcing the condition constant SP the dynamics of all state variables is altered.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132718860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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