Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices

Abstract

In this work, Lock-in Infrared Thermography (LIT) is presented as a powerful tool for failure analysis in power devices. These devices are electrically characterized in the frequency domain by thermal means to activate weak spots responsible for their misbehavior. As case studies, two different power devices are inspected using the LIT technique: a Vertical Double Diffused MOS (VDMOS) presenting an elevated gate leakage current and a SiC Schottky Barrier Diode with Tungsten contact (W-SBD) presenting a Schottky barrier modification by metal contact change.