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2017 Spanish Conference on Electron Devices (CDE)最新文献

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SPICE simulation of 1T1R structures based on a logistic hysteresis operator 基于logistic滞后算子的1T1R结构SPICE仿真
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905244
G. Patterson, A. Rodríguez-Fernandez, J. Suñé, E. Miranda, C. Cagli, L. Perniola
{"title":"SPICE simulation of 1T1R structures based on a logistic hysteresis operator","authors":"G. Patterson, A. Rodríguez-Fernandez, J. Suñé, E. Miranda, C. Cagli, L. Perniola","doi":"10.1109/CDE.2017.7905244","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905244","url":null,"abstract":"In this paper a SPICE (Simulation Program with Integrated Circuit Emphasis) implementation of a memristor model able to describe the major and minor current-voltage loops in bipolar resistive switches is reported. In particular, this work addresses the implementation of one transistor-one resistor (1T1R) structures for RRAM applications by means of SPICE simulations. Specifically, the dependence of the low-resistive state on the compliance current is investigated. The model is based on the combination of a diode-like device as the switching element and the logistic hysteron formalism for the memory effect. It is shown how the proposed circuit for the 1T1R structure reproduces the main features of the experimental output curves.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129470753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Technological solutions for large area microstrip radiation silicon sensors for the LHC Upgrade 大型强子对撞机升级用大面积微带辐射硅传感器的技术解决方案
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905242
J. Fernandez-Tejero, M. Ullán, C. Fleta, D. Quirion
{"title":"Technological solutions for large area microstrip radiation silicon sensors for the LHC Upgrade","authors":"J. Fernandez-Tejero, M. Ullán, C. Fleta, D. Quirion","doi":"10.1109/CDE.2017.7905242","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905242","url":null,"abstract":"Technological solutions for the transfer to large area microstrip radiation silicon sensors are presented for the upgrade of the ATLAS detector. A new Automatic Layout Generation Tool has been developed to easily adapt the design of the sensors, investigating also the fabrication processes involved in 6-inch wafer technology. Inter-strip and radiation hardness characterization of prototype sensors is presented, showing an agreement with the new specifications. Embedded Pitch Adaptor concept is studied as a solution for the sensor/readout interconnection for the forthcoming ATLAS Upgrade.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133843885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multisensor platform for indoor air quality measurements 室内空气质量测量多传感器平台
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905239
J. Gonzalez-Chavarri, E. Hammes, L. Parellada, I. Castro-Hurtado, E. Castaño, I. Ayerdi, H. Knapp, G. G. Mandayo
{"title":"Multisensor platform for indoor air quality measurements","authors":"J. Gonzalez-Chavarri, E. Hammes, L. Parellada, I. Castro-Hurtado, E. Castaño, I. Ayerdi, H. Knapp, G. G. Mandayo","doi":"10.1109/CDE.2017.7905239","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905239","url":null,"abstract":"The objective of this work is to develop a platform for a set of three conductometric sensors, able to deliver a controlled flow of indoor air samples in parallel to the three sensors. The system controls, on one hand, the air flow and, on the other hand, adds the capability of humidity control in two different ways: measuring humidity at the input and output, and stabilizing it through a filtering material. This way the performance of conductometric sensors can be enhanced, because one of the main causes of their low specificity is the cross-sensitivity to ambient humidity. The controlled amount of gas arriving at the sensors also avoids possible fluctuations in the sensor signals due to the air flow variations.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129336113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SPICE simulation of RRAM circuits. A compact modeling perspective RRAM电路的SPICE仿真。紧凑的建模透视图
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905250
G. González-Cordero, J. Roldán, F. Jiménez-Molinos
{"title":"SPICE simulation of RRAM circuits. A compact modeling perspective","authors":"G. González-Cordero, J. Roldán, F. Jiménez-Molinos","doi":"10.1109/CDE.2017.7905250","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905250","url":null,"abstract":"Two different compact models for resistive RAM (RRAMs) with filamentary conduction are compared in depth. One model describes RRAMs where conductive filaments (CFs) change their geometry laterally while the other model takes into consideration vertical variations of the CF. The role of the conductive filament (CF) ohmic resistance and the temperature evolution is carefully studied. The models have been implemented in SPICE to analyze circuits under step pulsed signals and voltage ramps. A single non-volatile memory cell using a NMOS transistor as selector device is studied in depth.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130075015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices HfO2/n+ si基器件阻性开关行为的顶电极依赖性
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905205
J. Muñoz-Gorriz, M. Acero, M. González, F. Campabadal
{"title":"Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices","authors":"J. Muñoz-Gorriz, M. Acero, M. González, F. Campabadal","doi":"10.1109/CDE.2017.7905205","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905205","url":null,"abstract":"In this work, an in-depth electrical characterization of the resistive switching phenomena in HfO2/n+Si-based RRAM devices with two different top electrode (TE) materials, Ni and Cu, is performed. The results show that when Ni is employed a significantly lower cycle-to-cycle variability and an enhanced performance are obtained compared to Cu-based devices.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129627798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of self-heating and hot phonons on the drift velocity in graphene 自热和热声子对石墨烯中漂移速度的影响
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905204
J. M. Iglesias, M. J. Martín, E. Pascual, R. Rengel
{"title":"Impact of self-heating and hot phonons on the drift velocity in graphene","authors":"J. M. Iglesias, M. J. Martín, E. Pascual, R. Rengel","doi":"10.1109/CDE.2017.7905204","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905204","url":null,"abstract":"In this paper we analyze the effects of the hot phonon and self-heating on the static electronic transport characteristics of monolayer graphene. For this purpose, the Ensemble Monte Carlo method self-consistently coupled to a thermal resistive model for the heat dissipation is employed. This way, the most relevant mechanisms that limit the drift velocity are considered in a microscopic framework. Results show that both phenomena -the hot phonon and self-heating- have significant impact, being the hot phonons particularly dominant at moderate fields and high carrier concentrations. Interplay between both phenomena reveals that taking hot phonons into account damps graphene and substrate self-heating due to a drop of the phonon emission/absorption ratio.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129457249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique 用经典分子动力学和动力学激活弛豫技术评价Si自间隙团簇拓扑跃迁的能垒
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905224
P. López, D. C. Ruiz, I. Santos, M. Aboy, L. Marqués, M. Trochet, N. Mousseau, L. Pelaz
{"title":"Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique","authors":"P. López, D. C. Ruiz, I. Santos, M. Aboy, L. Marqués, M. Trochet, N. Mousseau, L. Pelaz","doi":"10.1109/CDE.2017.7905224","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905224","url":null,"abstract":"The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume that the minimum energy one is instantaneously reached. The existence of significant energy barriers for configurational transitions may change the picture of defect evolution in non-equilibrium processes (such as ion implantation), and contribute to explain anomalous defect observations. In this work, we present a method to determine the energy barriers for topological transitions among small self-interstitial defects, which is applied to characterize the Si self-interstitial and the di-interstitial cluster.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117225350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ZnO and ZnO/SnO2 nanofibers as resistive gas sensors for NO2 detection ZnO和ZnO/SnO2纳米纤维用作NO2检测的电阻式气体传感器
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905203
I. Sayago, E. Hontañón, M. Aleixandre, M. Fernández, J.P. Santos, I. Gràcia
{"title":"ZnO and ZnO/SnO2 nanofibers as resistive gas sensors for NO2 detection","authors":"I. Sayago, E. Hontañón, M. Aleixandre, M. Fernández, J.P. Santos, I. Gràcia","doi":"10.1109/CDE.2017.7905203","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905203","url":null,"abstract":"The present work aims to verify the use of ZnO and ZnO/SnO2 composite nanofibers (NFs) as resistive NO2 gas sensors. Nanofibers with diameters of a few hundred nanometers were obtained by electrospinning of polyvinyl alcohol (PVA) and metallic salt solutions and deposited onto micromachined silicon substrates. The ZnO electrospun nanofibers exhibit good sensing properties to NO2 in the temperature range of 200°C to 300°C and concentrations between 50 ppb and 500 ppb, including rapid response and recovery time. Zn and Sn oxide composite NFs have lower responses in this temperature interval, but they show better sensing performance at room temperature. The morphology of the NFs has been characterized by scanning electron microscopy (SEM).","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115765057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Conditioning lab on PCB to control temperature and mix fluids at the microscale for biomedical applications 调理实验室在PCB上控制温度和混合流体在微观尺度的生物医学应用
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905215
M. Cabello, C. Aracil, F. Perdigones, J. Quero
{"title":"Conditioning lab on PCB to control temperature and mix fluids at the microscale for biomedical applications","authors":"M. Cabello, C. Aracil, F. Perdigones, J. Quero","doi":"10.1109/CDE.2017.7905215","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905215","url":null,"abstract":"In this paper, a Lab on PCB (LOP) for conditioning the medium of cell culture is presented. The target is to control its temperature at 37 °C ± 0.1 °C, to assure the appropriate temperature conditions around the cells. The Lab on PCB is also able to mix other fluids into the medium, if it is necessary. The integration of a PDMS microfluidic circuit over a Printed Circuit Board (PCB) results in a smart platform with a low-cost fabrication process. The microfluidic platform of the system includes three inlet ports, microchannels, a micromixer and one outlet port. The correct operation of the LOP assures that the medium is within the adequate conditions in the outlet port. The PCB incorporates a NTC thermistor to measure the temperature, and microheaters that are activated if the medium temperature is under 36.9 °C. The microheater fabrication process consists of patterning the copper layer of the PCB. The NTC thermistor is welded into copper pads and embedded in PDMS to avoid the contact with the fluid. The system is designed to allow the mixing and heating of fluids and it is connected to a cell culture Lab on PCB, and to an electronic control module, which include the electronic adapting circuit of the NTC and the control of the microheaters. The results of this study concerning the heating and mixing of fluids and the monitoring of temperature are successful.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128123227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High channel mobility in 4H-SiC N-MOSFET using N2O oxidation combined with Boron diffusion treatment 采用N2O氧化结合硼扩散处理的4H-SiC N-MOSFET的高通道迁移率
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905208
M. Cabello, V. Soler, J. Montserrat, J. Rebollo, P. Godignon, J. Millán
{"title":"High channel mobility in 4H-SiC N-MOSFET using N2O oxidation combined with Boron diffusion treatment","authors":"M. Cabello, V. Soler, J. Montserrat, J. Rebollo, P. Godignon, J. Millán","doi":"10.1109/CDE.2017.7905208","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905208","url":null,"abstract":"A new gate oxide configuration, including a Boron treatment, is reported in this work. It is designed to improve the SiO2/SiC interface quality in 4H-SiC N-MOSFETs. The obtained results show high field effect mobilities up to 160 cm2/Vs. The fabricated devices have also been undergone to a BSI stress up to 20 h at room temperature showing good threshold voltage stability. The physical (SIMS) analysis of the oxide and SiC surface reveals that Boron has not diffused into the SiC.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126648397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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