M. Cabello, V. Soler, J. Montserrat, J. Rebollo, P. Godignon, J. Millán
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引用次数: 0
摘要
本文报道了一种新的栅极氧化物结构，包括硼处理。它旨在改善4H-SiC n - mosfet中SiO2/SiC界面质量。得到的结果表明，高场效应迁移率高达160 cm2/Vs。所制备的器件在室温下经受了长达20小时的BSI应力，显示出良好的阈值电压稳定性。氧化物和碳化硅表面的物理(SIMS)分析表明硼没有扩散到碳化硅中。
High channel mobility in 4H-SiC N-MOSFET using N2O oxidation combined with Boron diffusion treatment
A new gate oxide configuration, including a Boron treatment, is reported in this work. It is designed to improve the SiO2/SiC interface quality in 4H-SiC N-MOSFETs. The obtained results show high field effect mobilities up to 160 cm2/Vs. The fabricated devices have also been undergone to a BSI stress up to 20 h at room temperature showing good threshold voltage stability. The physical (SIMS) analysis of the oxide and SiC surface reveals that Boron has not diffused into the SiC.
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