Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices

Abstract

In this work, an in-depth electrical characterization of the resistive switching phenomena in HfO2/n+Si-based RRAM devices with two different top electrode (TE) materials, Ni and Cu, is performed. The results show that when Ni is employed a significantly lower cycle-to-cycle variability and an enhanced performance are obtained compared to Cu-based devices.