HfO2/n+ si基器件阻性开关行为的顶电极依赖性

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905205

J. Muñoz-Gorriz, M. Acero, M. González, F. Campabadal

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引用次数: 5

摘要

在这项工作中，深入的电学表征了两种不同的顶电极(TE)材料，Ni和Cu, HfO2/n+ si基RRAM器件的电阻开关现象。结果表明，与基于cu的器件相比，使用Ni的器件具有更低的周期变异性和更高的性能。

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Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices

In this work, an in-depth electrical characterization of the resistive switching phenomena in HfO2/n+Si-based RRAM devices with two different top electrode (TE) materials, Ni and Cu, is performed. The results show that when Ni is employed a significantly lower cycle-to-cycle variability and an enhanced performance are obtained compared to Cu-based devices.

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2017 Spanish Conference on Electron Devices (CDE)

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