DC characteristics with substrate temperature for GaN on Si MOS-HEMTs

Abstract

DC characteristics of AlGaN/GaN on Si MOS-HEMTs are measured and numerically simulated, with substrate temperature up to 140°C, varying the gate width and gate length. Different gate recess depths are simulated in ATLAS in order to further investigate and optimize the device performance. Thermal boundary conditions and device thermal resistance are included in the structure for accurate simulation of the heating response. In addition, the relationship of the threshold voltage and saturation velocity with the substrate temperature and gate width has been studied and set in order to ease the modelling of these devices.