特征尺寸小于500nm的硅的电化学蚀刻

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905245

Didac Vega Bru, D. Maza, Á. R. Martínez

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引用次数: 1

摘要

在这项工作中，我们提出了使用大孔硅(MPS)实现在近红外(NIR)波长范围内工作的光子晶体(PCs)的第一步。本文所示的MPS结构是用硅的电化学蚀刻(EE)制备的。孔隙呈500 nm周期性的方阵排列，孔径在200 ~ 350 nm之间。初步结果表明，直线型孔隙均匀性好，尺寸可控。

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Electrochemical Etching of silicon with sub-500 nm feature size

In this work we present the first steps towards achieving Photonic Crystals (PCs) operating in the Near-Infrared (NIR) wavelength range using Macroporous Silicon (MPS). The MPS structures herein shown are fabricated using Electrochemical Etching (EE) of silicon. Pores are arranged in a square lattice of 500 nm periodicity and pore size is around 200 nm to 350 nm. Preliminary results show straight pores with good uniformity and controlled dimensions.

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2017 Spanish Conference on Electron Devices (CDE)

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