Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Abstract

Planar nano-diodes fabricated on an AlGaN/GaN heterolayer have been measured, showing capability to detect microwave signals up to 43.5 GHz at room temperature. A single nano-diode with length L=1000 nm and width W=74 nm provides a response of approximately 55 mV DC output for a 0 dBm nominal input power at 1 GHz, with a very small fraction of the RF power reaching effectively the device due to a very large impedance mismatch. A comprehensive analytical study, which uses as input data just the measured DC current-voltage curve of the diodes, is able to replicate the values of the RF characterization and allows a deep understanding of the detection mechanism.