Cost-effective cleaning solutions based on H2O/NH3/H2O2 mixtures for ALD Al2O3 passivated IBC c-Si solar cells

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905228

G. Masmitjà, P. Ortega, I. Martín, J. Pérez, G. López, E. Calle, L. G. Gerling, C. Voz, R. Alcubilla

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引用次数: 1

Abstract

In this work we study cost-effective cleaning solutions applied to interdigitated back-contacted solar cells (IBC), which are passivated by means of atomic layer deposited Al2O3 films. The cleaning baths must guarantee very clean surfaces as well as relatively low etching Al2O3 rates to avoid excessive undercutting at the edges of strip-like regions. We compare the standard high-cost cleaning procedure used in the microelectronic industry (RCA1/2) with simpler cleaning baths based on H2O/NH3/H2O2 mixtures considering different temperatures. The best option is the RCA1/2 sequence yielding surface recombination velocities below 4 cm/s but with a total Al2O3 etch around 500 nm after the cleaning stage. Nevertheless very simple and less aggressive cleaning baths performed at only 45 °C obtain a relatively good surface passivation quality, achieving Seff values of 20 ± 5 cm/s reducing the under etch to only 80 nm.

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基于H2O/NH3/H2O2混合物的高性价比ALD Al2O3钝化IBC c-Si太阳能电池清洁方案

在这项工作中，我们研究了具有成本效益的清洗方案应用于交叉背接触太阳能电池(IBC)，它是通过原子层沉积的Al2O3薄膜钝化。清洗槽必须保证非常干净的表面以及相对较低的蚀刻Al2O3速率，以避免在条状区域的边缘过度削弱。我们比较了微电子工业中使用的标准高成本清洗程序(RCA1/2)和基于H2O/NH3/H2O2混合物的简单清洗浴，考虑不同的温度。最佳选择是RCA1/2序列，其表面复合速度低于4 cm/s，但在清洗阶段后，Al2O3腐蚀总量约为500 nm。然而，在45°C下进行的非常简单和不太激进的清洗浴可以获得相对较好的表面钝化质量，实现20±5 cm/s的Seff值，将下蚀刻减少到仅80 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 Spanish Conference on Electron Devices (CDE)

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