A physically based model to describe resistive switching in different RRAM technologies

G. González-Cordero, M. González, H. García, F. Campabadal, S. Dueñas, H. Castán, F. Jiménez-Molinos, J. Roldán
{"title":"A physically based model to describe resistive switching in different RRAM technologies","authors":"G. González-Cordero, M. González, H. García, F. Campabadal, S. Dueñas, H. Castán, F. Jiménez-Molinos, J. Roldán","doi":"10.1109/CDE.2017.7905223","DOIUrl":null,"url":null,"abstract":"A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration. The thermal description of the CF is included by solving the heat equation. The model has been employed to reproduce I–V curves of different RRAM technologies making use of the correct model parameters in each case. Therefore, it is suitable to be implemented in circuit simulators to analyze circuits based on RRAMs under different operation regimes.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2017.7905223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration. The thermal description of the CF is included by solving the heat equation. The model has been employed to reproduce I–V curves of different RRAM technologies making use of the correct model parameters in each case. Therefore, it is suitable to be implemented in circuit simulators to analyze circuits based on RRAMs under different operation regimes.
一个基于物理的模型来描述不同RRAM技术中的电阻开关
提出了一种基于金属-绝缘子-金属(MIM)结构的rram细丝导电模型。该模型通过计算电介质中导电丝(CFs)的形成和断裂来描述RRAM的电阻开关过程。考虑了电极的电阻、CF的电阻以及CF尖端与电极之间的跳变电流。通过求解热方程,对CF进行了热描述。该模型利用正确的模型参数,再现了不同RRAM技术的I-V曲线。因此,适合在电路模拟器中实现基于rram的电路在不同工作状态下的分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信