Chao Li, F. Müller, T. Ali, R. Olivo, M. Imani, Shan Deng, Cheng Zhuo, T. Kämpfe, Xunzhao Yin, K. Ni
{"title":"A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing","authors":"Chao Li, F. Müller, T. Ali, R. Olivo, M. Imani, Shan Deng, Cheng Zhuo, T. Kämpfe, Xunzhao Yin, K. Ni","doi":"10.1109/IEDM13553.2020.9372119","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9372119","url":null,"abstract":"Content addressable memory (CAM) is widely used for data-centric computing for its massive parallelism and pattern matching capability. Though the CAM density has been improved by replacing the area-consuming SRAM with compact emerging nonvolatile memories (NVMs), its implementation has been limited to single level cell. To further boost the CAM density for data-intensive workloads, exploiting the multi-level cell NVMs is highly desirable. In this work, we demonstrate: 1) a novel scalable and ultra-compact multi-bit 2FeFET1T CAM design based on two ferroelectric FETs (FeFETs) and one transistor; 2) successful operations of the proposed CAM cell and array in experiment based on 2-bit FeFET memory, and sufficient sensing margin for an 1x32 CAM array through statistical analysis considering the device variation; 3) 22.6x area per bit saving compared with SRAM CAM; 4) 16x search speedup, and 29x reduction in energy delay product over the SRAM CAM approach in accelerating a database query processing application.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128181338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yonghun Kwon, Sung-Uk Seo, Sunghyuck Cho, Sungsoo Choi, Taeun Hwang, Youngchan Kim, Young-Gu Jin, Youngsun Oh, Min-Sun Keel, Daeyun Kim, M. Bae, Yeomyung Km, Seung-Chul Shin, S. Hong, Seok-Ha Lee, Howoo Park, Yitae Kim, Kyoungmin Koh, JungChak Ahn
{"title":"A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength","authors":"Yonghun Kwon, Sung-Uk Seo, Sunghyuck Cho, Sungsoo Choi, Taeun Hwang, Youngchan Kim, Young-Gu Jin, Youngsun Oh, Min-Sun Keel, Daeyun Kim, M. Bae, Yeomyung Km, Seung-Chul Shin, S. Hong, Seok-Ha Lee, Howoo Park, Yitae Kim, Kyoungmin Koh, JungChak Ahn","doi":"10.1109/IEDM13553.2020.9371950","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371950","url":null,"abstract":"A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high quantum efficiency (QE) has been achieved by backside scattering technology (BST) and thick silicon process. In addition, demodulation contrast (DC) is improved to 86 % by additional deep photodiode doping process for static potential gradient in a photodiode.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132116169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Li, N. D. Stuyck, S. Kubicek, J. Jussot, B. Chan, F. Mohiyaddin, A. Elsayed, M. Shehata, G. Simion, C. Godfrin, Y. Canvel, T. Ivanov, L. Goux, B. Govoreanu, I. Radu
{"title":"A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration","authors":"R. Li, N. D. Stuyck, S. Kubicek, J. Jussot, B. Chan, F. Mohiyaddin, A. Elsayed, M. Shehata, G. Simion, C. Godfrin, Y. Canvel, T. Ivanov, L. Goux, B. Govoreanu, I. Radu","doi":"10.1109/IEDM13553.2020.9371956","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371956","url":null,"abstract":"We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131755374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ning Yang, Hung-Yu Chen, Jiangbin Wu, Tong Wu, Jun Cao, X. Ling, H. Wang, J. Guo
{"title":"Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection","authors":"Ning Yang, Hung-Yu Chen, Jiangbin Wu, Tong Wu, Jun Cao, X. Ling, H. Wang, J. Guo","doi":"10.1109/IEDM13553.2020.9371964","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371964","url":null,"abstract":"Atomically thin van der Waals (vdW) heterojunctions are investigated for ferroelectric tunnel junction (FTJ) device application by combining multiscale simulations from atomistic ab initio to quantum transport device simulations with experimental studies. The simulation reveals that low quantum capacitance of graphene, weak electronic hybridization of vdW bonds, and high interface quality free of dangling bonds can lead to extremely large vdW interface barrier height modulation at the graphene-CuInP2S6 ferroelectric (FE) interface. As a result, the simulated and experimental I-V characteristics show an unprecedented large tunneling electroresistance ratio. The vdW ferroelectric CIPS material further permits the tunneling barrier to be scaled down to atomic thickness. Quantum transport device simulations indicate that scaling of the FE layer thickness exponentially increases the ferroelectric tunneling ON current and reduces the read latency, leading to nanosecond read speed for the FTJs with CIPS bilayer or trilayer. The FTJ device also shows excellent endurance and retention characteristics.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130784623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Lischke, A. Peczek, F. Korndörfer, C. Mai, H. Haisch, M. Koenigsmann, M. Rudisile, D. Steckler, F. Goetz, M. Fraschke, S. Marschmeyer, A. Krüger, Y. Yamamoto, D. Schmidt, U. Saarow, P. Heinrich, A. Kroh, M. Schubert, J. Katzer, P. Kulse, A. Trusch, L. Zimmermann
{"title":"Ge Photodiode with -3 dB OE Bandwidth of 110 GHz for PIC and ePIC Platforms","authors":"S. Lischke, A. Peczek, F. Korndörfer, C. Mai, H. Haisch, M. Koenigsmann, M. Rudisile, D. Steckler, F. Goetz, M. Fraschke, S. Marschmeyer, A. Krüger, Y. Yamamoto, D. Schmidt, U. Saarow, P. Heinrich, A. Kroh, M. Schubert, J. Katzer, P. Kulse, A. Trusch, L. Zimmermann","doi":"10.1109/IEDM13553.2020.9372033","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9372033","url":null,"abstract":"We present an SOI-waveguide coupled germanium photodiode with very high OE -3 dB bandwidth of ≥110 GHz at reverse bias of 2 V. This performance is achieved by a novel construction in that the germanium is sandwiched in between two in-situ doped silicon regions. This fabrication approach allows for avoiding ion-implantation into the germanium, which is certainly beneficial for the bandwidth as minority carrier diffusion effects are strongly suppressed. A responsivity of >0.6 A/W at 1550 nm (-2 V) is achieved, while the dark current of this device yields to about 300 nA (-2 V). To our knowledge, this is the most advanced germanium photo detector in terms of bandwidth combined with state-of-the-art responsivity as well as moderate dark currents. We demonstrate that the novel photodiodes can be fabricated with high yield.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133752596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Rosenbaum, J. Xiong, A. Yang, Z. Chen, M. Raginsky
{"title":"Machine Learning for Circuit Aging Simulation","authors":"E. Rosenbaum, J. Xiong, A. Yang, Z. Chen, M. Raginsky","doi":"10.1109/IEDM13553.2020.9371931","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371931","url":null,"abstract":"The widespread availability of high-quality open source software for behavioral model optimization motivates the investigation of a behavioral approach to the modeling of aged circuits. A continuous-time formulation of a recurrent neural network (RNN) is compatible with transient circuit simulation, and this work evaluates RNN applicability to the modeling of aged circuits. For any reasonable input, the model should be required to produce an output response that is physically plausible. Approaches to imposing physical constraints on black-box models are outlined briefly.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124130005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Chip Design for Future Gravitational Wave Detectors","authors":"F. Tavernier, A. Gatti, C. Barretto","doi":"10.1109/IEDM13553.2020.9372071","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9372071","url":null,"abstract":"Advanced gravitational wave detectors have to operate under extreme conditions of temperature and/or radiation. In this paper, we discuss the limitations of existing device models required for the design of custom chips for these systems. Specific limitations are highlighted for the Einstein Telescope and LISA design cases, demonstrating the need for extended foundry models to accelerate the development of electronics to support such advanced experiments.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124194911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wonjun Shin, Seongbin Hong, Y. Jeong, Gyuweon Jung, Jinwoo Park, D. Kwon, D. Jang, Donghee Kim, Byung-Gook Park, Jong-Ho Lee
{"title":"Efficient Improvement of Sensing Performance Using Charge Storage Engineering in Low Noise FET-type Gas Sensors","authors":"Wonjun Shin, Seongbin Hong, Y. Jeong, Gyuweon Jung, Jinwoo Park, D. Kwon, D. Jang, Donghee Kim, Byung-Gook Park, Jong-Ho Lee","doi":"10.1109/IEDM13553.2020.9371920","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371920","url":null,"abstract":"A novel charge storage engineering (CSE) using program/erase (P/E) operation for improving the sensing performance of FET-type gas sensors with floating-gate is proposed for the first time. The responses of the sensors to NO2 and H2S gases are significantly improved when the sensors are set at programmed (holes stored) and erased (electrons stored) states, respectively. The sensor, fabricated simply using 6 masks, has a 1/f noise (SID/ID2) that is ~103 times lower than that of resistor-type gas sensor fabricated on the same substrate, and is resistant to P/E F-N stress. The proposed CSE not only improves the response and limit of detection, but also allows selectivity for NO2 and H2S gases up to 5 and 6 times, respectively.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124389293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Radiative Wireless Power Transmission: From Indoor to In-Body Applications","authors":"H. Visser","doi":"10.1109/IEDM13553.2020.9371957","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371957","url":null,"abstract":"In this overview paper we will discuss the feasibility of radiative Wireless Power Transfer (WPT). We will look at the power levels available and the consequences for practical use. Miniaturized WPT receivers will find employment in low-power, duty-cycled IoT sensor applications and are candidates for future biomedical implants.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114337471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier
{"title":"Challenges and perspectives in the modeling of spin qubits","authors":"Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier","doi":"10.1109/IEDM13553.2020.9371962","DOIUrl":"https://doi.org/10.1109/IEDM13553.2020.9371962","url":null,"abstract":"We discuss the status, challenges and perspectives of \"Quantum CAD\" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123686777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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