R. Li, N. D. Stuyck, S. Kubicek, J. Jussot, B. Chan, F. Mohiyaddin, A. Elsayed, M. Shehata, G. Simion, C. Godfrin, Y. Canvel, T. Ivanov, L. Goux, B. Govoreanu, I. Radu
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引用次数: 14
Abstract
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.
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