Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier
{"title":"Challenges and perspectives in the modeling of spin qubits","authors":"Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier","doi":"10.1109/IEDM13553.2020.9371962","DOIUrl":null,"url":null,"abstract":"We discuss the status, challenges and perspectives of \"Quantum CAD\" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We discuss the status, challenges and perspectives of "Quantum CAD" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.
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