Yonghun Kwon, Sung-Uk Seo, Sunghyuck Cho, Sungsoo Choi, Taeun Hwang, Youngchan Kim, Young-Gu Jin, Youngsun Oh, Min-Sun Keel, Daeyun Kim, M. Bae, Yeomyung Km, Seung-Chul Shin, S. Hong, Seok-Ha Lee, Howoo Park, Yitae Kim, Kyoungmin Koh, JungChak Ahn
{"title":"A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength","authors":"Yonghun Kwon, Sung-Uk Seo, Sunghyuck Cho, Sungsoo Choi, Taeun Hwang, Youngchan Kim, Young-Gu Jin, Youngsun Oh, Min-Sun Keel, Daeyun Kim, M. Bae, Yeomyung Km, Seung-Chul Shin, S. Hong, Seok-Ha Lee, Howoo Park, Yitae Kim, Kyoungmin Koh, JungChak Ahn","doi":"10.1109/IEDM13553.2020.9371950","DOIUrl":null,"url":null,"abstract":"A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high quantum efficiency (QE) has been achieved by backside scattering technology (BST) and thick silicon process. In addition, demodulation contrast (DC) is improved to 86 % by additional deep photodiode doping process for static potential gradient in a photodiode.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high quantum efficiency (QE) has been achieved by backside scattering technology (BST) and thick silicon process. In addition, demodulation contrast (DC) is improved to 86 % by additional deep photodiode doping process for static potential gradient in a photodiode.
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