A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

Abstract

Content addressable memory (CAM) is widely used for data-centric computing for its massive parallelism and pattern matching capability. Though the CAM density has been improved by replacing the area-consuming SRAM with compact emerging nonvolatile memories (NVMs), its implementation has been limited to single level cell. To further boost the CAM density for data-intensive workloads, exploiting the multi-level cell NVMs is highly desirable. In this work, we demonstrate: 1) a novel scalable and ultra-compact multi-bit 2FeFET1T CAM design based on two ferroelectric FETs (FeFETs) and one transistor; 2) successful operations of the proposed CAM cell and array in experiment based on 2-bit FeFET memory, and sufficient sensing margin for an 1x32 CAM array through statistical analysis considering the device variation; 3) 22.6x area per bit saving compared with SRAM CAM; 4) 16x search speedup, and 29x reduction in energy delay product over the SRAM CAM approach in accelerating a database query processing application.