一种2.8 μm像素的飞行时间(Time of Flight) CMOS图像传感器，在940nm波长下具有20ke - full - well容量和36%的量子效率

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371950

Yonghun Kwon, Sung-Uk Seo, Sunghyuck Cho, Sungsoo Choi, Taeun Hwang, Youngchan Kim, Young-Gu Jin, Youngsun Oh, Min-Sun Keel, Daeyun Kim, M. Bae, Yeomyung Km, Seung-Chul Shin, S. Hong, Seok-Ha Lee, Howoo Park, Yitae Kim, Kyoungmin Koh, JungChak Ahn

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引用次数: 7

摘要

为一种紧凑、高分辨率的ToF (time of flight) CMOS图像传感器，实现了2.8μm 4分路全局快门像素。每个抽头可获得20,000 e-高全井容量(FWC)。采用后向散射技术(BST)和厚硅工艺实现了36%的高量子效率。此外，通过在光电二极管中添加静态电位梯度的深度掺杂工艺，将解调对比度(DC)提高到86%。

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A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength

A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high quantum efficiency (QE) has been achieved by backside scattering technology (BST) and thick silicon process. In addition, demodulation contrast (DC) is improved to 86 % by additional deep photodiode doping process for static potential gradient in a photodiode.

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2020 IEEE International Electron Devices Meeting (IEDM)

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