自旋量子比特建模的挑战与展望

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371962

Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier

{"title":"自旋量子比特建模的挑战与展望","authors":"Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier","doi":"10.1109/IEDM13553.2020.9371962","DOIUrl":null,"url":null,"abstract":"We discuss the status, challenges and perspectives of \"Quantum CAD\" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Challenges and perspectives in the modeling of spin qubits\",\"authors\":\"Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier\",\"doi\":\"10.1109/IEDM13553.2020.9371962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss the status, challenges and perspectives of \\\"Quantum CAD\\\" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.\",\"PeriodicalId\":415186,\"journal\":{\"name\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM13553.2020.9371962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

我们讨论了“量子CAD”在自旋量子比特的设计和探索中的现状、挑战和前景。我们强调了与传统的微电子TCAD的异同，并重点介绍了绝缘体上硅量子比特的设计、物理和可变性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Challenges and perspectives in the modeling of spin qubits

We discuss the status, challenges and perspectives of "Quantum CAD" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量