Wonjun Shin, Seongbin Hong, Y. Jeong, Gyuweon Jung, Jinwoo Park, D. Kwon, D. Jang, Donghee Kim, Byung-Gook Park, Jong-Ho Lee
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引用次数: 3
摘要
首次提出了一种利用程序/擦除(P/E)运算提高fet型浮栅气体传感器传感性能的电荷存储新方法。当传感器分别设置为编程(存储空穴)和擦除(存储电子)状态时，传感器对NO2和H2S气体的响应显著提高。该传感器仅使用6个掩模制作，具有1/f噪声(SID/ID2)，比在相同衬底上制作的电阻式气体传感器低约103倍，并且可以抵抗P/E f - n应力。所提出的CSE不仅提高了响应和检测限，而且对NO2和H2S气体的选择性分别提高了5倍和6倍。
Efficient Improvement of Sensing Performance Using Charge Storage Engineering in Low Noise FET-type Gas Sensors
A novel charge storage engineering (CSE) using program/erase (P/E) operation for improving the sensing performance of FET-type gas sensors with floating-gate is proposed for the first time. The responses of the sensors to NO2 and H2S gases are significantly improved when the sensors are set at programmed (holes stored) and erased (electrons stored) states, respectively. The sensor, fabricated simply using 6 masks, has a 1/f noise (SID/ID2) that is ~103 times lower than that of resistor-type gas sensor fabricated on the same substrate, and is resistant to P/E F-N stress. The proposed CSE not only improves the response and limit of detection, but also allows selectivity for NO2 and H2S gases up to 5 and 6 times, respectively.
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