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2019 IEEE 31st International Conference on Microelectronics (MIEL)最新文献

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2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/miel.2019.8889571
{"title":"1stpage","authors":"","doi":"10.1109/miel.2019.8889571","DOIUrl":"https://doi.org/10.1109/miel.2019.8889571","url":null,"abstract":"","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114475391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proton Accelerator's Direct Ionization Single Event Upset Test Procedure 质子加速器直接电离单事件扰动试验程序
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889634
A. Akhmetov, G. Sorokoumov, A. Smolin, D. Bobrovsky, D. Boychenko, A. Nikiforov, A. Shemyakov
{"title":"Proton Accelerator's Direct Ionization Single Event Upset Test Procedure","authors":"A. Akhmetov, G. Sorokoumov, A. Smolin, D. Bobrovsky, D. Boychenko, A. Nikiforov, A. Shemyakov","doi":"10.1109/MIEL.2019.8889634","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889634","url":null,"abstract":"The paper presents single event upset (SEU) experimental results in Spartan-6 FPGA due to direct and indirect proton ionization. High energy proton beam and aluminum foils were used to decrease proton energy down to 1… 20 MeV to observe proton direct ionization upsets.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115013107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures 基于InGaN、GaN和AlInGaP异质结构的led辐射硬度评价
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889651
D. Ukolov, N. A. Chirkov, R. Mozhaev, A. Pechenkin
{"title":"Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures","authors":"D. Ukolov, N. A. Chirkov, R. Mozhaev, A. Pechenkin","doi":"10.1109/MIEL.2019.8889651","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889651","url":null,"abstract":"The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124605786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Differential Input Area Efficient Current Comparator 差分输入面积高效电流比较器
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889641
A. Serazetdinov, E. Atkin
{"title":"Differential Input Area Efficient Current Comparator","authors":"A. Serazetdinov, E. Atkin","doi":"10.1109/MIEL.2019.8889641","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889641","url":null,"abstract":"Differential input area efficient current comparator for multichannel detector (sensor) applications is presented. Comparator consists of current preamplifier, hysteresis latch, amplifier-voltage limiter and output low-voltage to CMOS translator, having built-in polarity selection switch. The latch geometry was chosen to feature non-zero hysteresis and minimum size. The key features of the proposed solution are low voltage swing before translator, low power consumption and simplicity. The comparator was developed in UMC 180 nm MMRF CMOS process. The power consumption is in range of $60 mu mathrm{W}$ at 1.8 V for all PVT variations. Its layout cell was designed to be an area efficient one and occupies $1200 mu mathrm{m}^{2}$.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132915015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Virtual System for Measurement of Inkjet Printed Resistive and Capacitive Structures 用于喷墨印刷电阻和电容结构测量的虚拟系统
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889597
G. Nikolov, E. Gieva, B. Nikolova, I. Ruskova
{"title":"Virtual System for Measurement of Inkjet Printed Resistive and Capacitive Structures","authors":"G. Nikolov, E. Gieva, B. Nikolova, I. Ruskova","doi":"10.1109/MIEL.2019.8889597","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889597","url":null,"abstract":"The presented article describes the method and sequence in creating a virtual measurement system using a modern LabView-controlled measuring instrument. We have implemented a virtual environment for measuring different electrical characteristics of printed resistive and capacitive sensor structures through Inkjet technology. The determination of different parameters of the printed structures makes it possible to characterize them and to determine their applications.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129068606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pt Resistive Film Sensors Pt电阻膜传感器
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889625
Z. Stanimirović, I. Stanimirović
{"title":"Pt Resistive Film Sensors","authors":"Z. Stanimirović, I. Stanimirović","doi":"10.1109/MIEL.2019.8889625","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889625","url":null,"abstract":"Temperature sensors are being widely used in various aspects of our lives. One of the most important areas of their application is environmental monitoring. In air velocity measurements resistive temperature detectors are often used. For this reason, as an initial step in development of novel thermo-anemometer that will allow 3D wind speed measurements, a series of Pt resistive film sensors that combine custom made thin-film material and thick-film technology was realized. In this paper these sensors will be presented from design and manufacturing stage to evaluation of sensor performances.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114475555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanocrystalline Porous Nickel Ferrite Ceramics for Humidity Sensing Applications 用于湿度传感的纳米晶多孔镍铁氧体陶瓷
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889583
D. Sekulić, Z. Lazarević, N. Romčević
{"title":"Nanocrystalline Porous Nickel Ferrite Ceramics for Humidity Sensing Applications","authors":"D. Sekulić, Z. Lazarević, N. Romčević","doi":"10.1109/MIEL.2019.8889583","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889583","url":null,"abstract":"Over the last two decade, considerable interest has been received to synthesize novel ceramic nanomaterials with high humidity sensitivity characteristics for the fabrication of low-cost, fast and stable humidity sensors. This paper reports the preliminary results of humidity sensing properties of the nanocrystalline porous nickel ferrite ceramics fabricated by a conventional sintering of ultrafine nanopowders, which were successfully synthesized by soft mechanochemical processing. By using SEM and X-ray diffraction analyzes, the structural characteristics (average size of crystallites, density and porosity) of prepared NiFe2O4 ceramics were determined. At room temperature, this sensing material showed a linear response of impedance change within the wide relative humidity range from 15% to 85% at frequency of 2.5 kHz. Furthermore, the response time (adsorption process) of 26 s and the recovery time (desorption process) of 43 s have been obtained for this porous ceramic sensing material. Also, relatively small hysteresis, good repeatability and stability were also observed.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116160188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Strong Electric Monopulses in Nonuniformly Doped Nitride Films under Negative Differential Conductivity 负差分电导率下非均匀掺杂氮化膜中的强电单脉冲
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889646
V. Grimalsky, S. Koshevaya, J. Escobedo-A., J. Sanchez-S.
{"title":"Strong Electric Monopulses in Nonuniformly Doped Nitride Films under Negative Differential Conductivity","authors":"V. Grimalsky, S. Koshevaya, J. Escobedo-A., J. Sanchez-S.","doi":"10.1109/MIEL.2019.8889646","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889646","url":null,"abstract":"The excitation of the strong nonlinear monopulses of space charge waves in the transversely non-uniform $n$-GaN and $n$-InN films is investigated theoretically. The stable numerical algorithms have been used for nonlinear 3D simulations. The monopulses of the strong electric field of durations 3 – 10 ps can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate for the nitrides 1016 −1017 cm−3. The electric monopulses of high peak values are excited from input small electric pulses. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125963539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-Voltage Pulse Trimming of Thick-Film Resistors - Some Modelling Aspects 厚膜电阻器的高压脉冲修整-一些建模方面
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889587
I. Stanirnirović, Z. Stanimirović
{"title":"High-Voltage Pulse Trimming of Thick-Film Resistors - Some Modelling Aspects","authors":"I. Stanirnirović, Z. Stanimirović","doi":"10.1109/MIEL.2019.8889587","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889587","url":null,"abstract":"Novel applications of thick-film technology require precision trimming of thick-film resistors that are being used as both resistive and sensing elements. High-voltage pulse trimming provides high precision trimming leaving the resistor body undamaged and resistor geometry intact. This paper introduces an adapted statistical bimodal bond conductance approach to analysis of high-voltage pulse trimmed thick-film resistors. Application of high-voltage pulses causes transitions from contact conductance to tunneling conductance and vice versa in resistors whose disordered structure is being presented using 3D planar random resistor network.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125082507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advanced Electro-Optical Analysis of Photoplethysmogram Signal 光电容积图信号的先进光电分析
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889633
L. Evdochim, D. Dobrescu, L. Dobrescu
{"title":"Advanced Electro-Optical Analysis of Photoplethysmogram Signal","authors":"L. Evdochim, D. Dobrescu, L. Dobrescu","doi":"10.1109/MIEL.2019.8889633","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889633","url":null,"abstract":"Commonly used to monitor oxygen saturation, the pulse oximeter device can be exploited further than its primary function, using an advanced analysis of the optical sensor output signal. Due to its simplicity, the cost to diagnose patient's circulatory system disease becomes low, but the effort to process the recorded signal and analyze it becomes high. The pulse oximeter output signal contains information such as the blood oxygen concentration and the cardiac rhythm period. However, because of strong connections between the mechanical, optical and electrical proprieties, a lot of valuable information can be extracted regarding arterial blood pressure and arterial stiffness. Medical data of the cardiac abnormalities or the circulatory diseases can also be extracted. In this paper an advanced analysis describe the connection between pulse oximeter signal and mechanical, optical and electrical phenomena in order to determine blood pressure value.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121721130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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