Strong Electric Monopulses in Nonuniformly Doped Nitride Films under Negative Differential Conductivity

V. Grimalsky, S. Koshevaya, J. Escobedo-A., J. Sanchez-S.
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引用次数: 2

Abstract

The excitation of the strong nonlinear monopulses of space charge waves in the transversely non-uniform $n$-GaN and $n$-InN films is investigated theoretically. The stable numerical algorithms have been used for nonlinear 3D simulations. The monopulses of the strong electric field of durations 3 – 10 ps can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate for the nitrides 1016 −1017 cm−3. The electric monopulses of high peak values are excited from input small electric pulses. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors.
负差分电导率下非均匀掺杂氮化膜中的强电单脉冲
从理论上研究了横向非均匀n$-GaN和n$-InN薄膜中空间电荷波强非线性单脉冲的激发。稳定的数值算法已被用于非线性三维模拟。可以激发持续时间为3 - 10ps的强电场单脉冲。偏置电场的选择应略高于观察负微分电导率的阈值。对于1016 ~ 1017 cm−3的氮化物,掺杂水平应适中。高峰值的电单脉冲由输入的小电脉冲激发而成。薄膜中的这些非线性单脉冲不同于体半导体中的强电场域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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