2019 IEEE 31st International Conference on Microelectronics (MIEL)最新文献

{"title":"Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET","authors":"M. Kessi, A. Benfdila, A. Lakhelef, L. Belhimer, M. Djouder","doi":"10.1109/MIEL.2019.8889640","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889640","url":null,"abstract":"Cylindrical gate all around (CGAA) MOSFET has been studied and the body potential has been simulated and studied. The center and surface potentials models are studied and a comparison is made between the two potential behaviours for a CGAA MOSFET. Moreover, the channel doping concentration and the band diagrams are obtained using the finite element numerical method by solving poisson's equation in the cylindrical coordinate system.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116258620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Analysis of Layout-Aware Fault Injection on TMR-based DMA Controllers","authors":"P. Chernyakov, A. Skorobogatov, A. Zvyagin, E. Emin, I. Danilov, A. Balbekov, A. S. Khazanova, M. Gorbunov","doi":"10.1109/MIEL.2019.8889643","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889643","url":null,"abstract":"We present a comparative analysis of the layout-aware fault injection simulation results for Direct Memory Access (DMA) controllers with local, distributed, global and block Triple Modular Redundancy (TMR). The applied technique is also presented.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116430865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis and Design of Power Processing Circuits for Thin Film Piezoelectric Energy Harvesters on Flexible Polyethylene Terephthalate Substrates","authors":"I. Pandiev, Mariya Aleksandrova, G. Kolev","doi":"10.1109/MIEL.2019.8889614","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889614","url":null,"abstract":"Piezoelectric potassium niobate based harvesters with active films' thickness between 200 nm and 400 nm are fabricated by vacuum radiofrequency (RF) sputtering on plastic polyethylene terephthalate substrates. Using gold electrodes at the opposite sides of the samples, they show piezoelectric rms voltage between 300 mV and 600 mV generated from 3 cm2 area, according to the film's thickness. The obtained current from a single harvester is up to $1 mu A$. An AC/DC power processing circuit topology intended for this type of piezoelectric energy harvesters is proposed and investigated. A DC/DC monolithic low-power converter is connected between the output port of the bridge rectifiers with smoothing capacitor and the load (such as rechargeable battery or supercapacitor (SC)) in order to properly regulate the rectified voltage. Experimental tests, conducted by using the synthesized piezoelectric energy harvesters on flexible substrates, validate the theoretical analysis and results.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"19 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123629762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An AlSiN Nanocomposite Film with Improved Mechanical Parameters for Multifunctional Applications","authors":"L. Kolaklieva, R. Kakanakov, T. Cholakova, H. Bahchedzhiev, V. Chitanov","doi":"10.1109/MIEL.2019.8889603","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889603","url":null,"abstract":"An AlSiN film was deposited by cathodic arc evaporation. The structure and composition of the film were investigated by XRD, EDS and XPS analyses. The film had a nanocomposite structure consisting of (AlSi)N nanograins incorporated in a Si3N4 matrix. The film hardness determined by nanoindentation measurements was found to be 46 GPa. The AlSiN nanocomposite demonstrated improved elastic strain to failure (H/E=0.10), very good resistance to plastic deformation (H3/E2=0.44) and elastic recovery of 67%, which indicated improved toughness. The nanocomposite AlSiN film exhibited a low friction coefficient of 0.9 against the diamond indenter and enhanced wear resistance with wear rate of 7.56×10−10 mm3/ (N.GPa.m).","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130209006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-Rate Signal Processing with the Use of Filter Banks Composed of Parallel FIR Filters","authors":"M. Banach, R. Dlugosz","doi":"10.1109/MIEL.2019.8889611","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889611","url":null,"abstract":"The paper presents a concept of a hardware implementation of 2-D finite impulse response (FIR) filter banks for the application in image processing and analysis. Banks composed of low-and high-pass FIR filters are basic components of multi-stage discrete wavelet transform (DWT). The applications of such solutions that are in the scope of our interests are vision systems used in automotive active safety functions (e.g in line departure warning). Basics of the DWT are broadly described in the literature. In our work we focus on solutions supporting hardware realization of filter banks for DWT. The proposed parallel and asynchronous circuits allow to achieve the processing time for a single pixel not exceeding 2 to 4 ns, depending on the size of the mask (data for TSMC 180 nm CMOS process).","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130718421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hardware Implementation of Selected Statistical Quantities for Applications in Automotive V2I Communication System","authors":"M. Banach, R. Dlugosz, T. Talaśka","doi":"10.1109/MIEL.2019.8889593","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889593","url":null,"abstract":"In this work we propose a concept of a transistor level implementation of a simplified iterative methods for computing several basic statistical quantities, such as the mean and the variance. The motivation behind the presented work is the realization of a calibration algorithm for determining the positions of the V2I (vehicle-to-infrastructure) communication devices in novel automotive applications. Such devices, mounted in fixed points of the road and urban infrastructure (RSU - road side equipment) will be used to support autonomous vehicles moving in urban and suburban environments. The role of the calibration procedure is to determine the positions of the RSU devices in global coordinate system (GCS) and save it in their internal memory blocks. To facilitate the hardware implementation, we introduced some modifications to existing (conventional) iterative algorithms used for the computation of the statistical quantities. For this purpose, we eliminated division operations, substituting them with bit shift operations. Shifting the bits may be easily realized fully asynchronously in hardware, using only a passive commutation field.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130470983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the Ballistic Transport in Si Nano-Devices","authors":"G. Golan, M. Azoulay, J. Bernstein","doi":"10.1109/MIEL.2019.8889599","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889599","url":null,"abstract":"The field of reliability physics for microelectronic devices is facing a significant challenge during the last decade due to the fact that the technology node (channel length and gate oxide size) has been reduced to the dimensions of charged carriers “mean free path” of silicon, which is about 15 nm at room temperature. This may involve the physical mechanism of ballistic conductance at the channel and at the gate of a MOSFET device. Recently, reliability research programs have made significant progress and developed new theoretical models and experimental methods that would fit the down scaling trend and explain the wearout mechanisms with regards to an innovative reliability physics approach. The classical, reliability common model, High Temperature Operational Life (HTOL) was found to be limited in its ability to distinguish between the dominating failure mechanisms (HCI, BTI, TDDB, EM) and the reliability physics standard methods, that are assessing the lifetime of a specific structure for just one particular mechanism at a time. More recently, a new model, named Multi Failure Mechanism, MTOL, has been introduced and posed a better understanding of the dominating failure mechanisms under various stressed conditions. Experiments were carried out on advanced technologies FPGA devices of Xilinx 45 and 28 nanometer. The insitu monitored experimental data enabled to calculate the activation energy of various degradation mechanisms, providing a more accurate and realistic prediction of the lifetime and point out on the apparent dominating wearout mechanisms. In this paper we report, for the first time, on a new phenomenon that was observed on 28 nm FPGA devices during their reliability testing. We employed the MTOL model at a temperature range of −60°C up to 160°C. The experimental results for 28 nm were compared to the 45 nm data (reported recently by Bernstein et al.) that have been recorded under identical testing conditions. From the comparison of the normalized degradation rate versus temperature, a clear deviation could be noted; the 28 nm devices have shown a distinct transition of the dominating failure mechanism at a particular temperature, whereas the 45 nm devices have not shown any transition along the entire temperature range of the test. Furthermore, the calculated values could be correlated to the recent published data, attributing the transistor channel conductance to the effect of “short channel ballistic conductance” at a lower temperature range. At higher temperatures (higher than the transition temperature), both 45 and 28 nm devices have shown similar slopes (normalized ring oscillator frequency versus temperature). To the best of our knowledge, such temperature dependence has not been reported up to now. $T$ his may indicate on a pronounced advantage of the lower node devices (28 nm) for operation at lower temperatures. Nevertheless, our study is ongoing to lower technology nodes (20 nm and 16 nm), which may provide additional","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127974985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual Mode Ion Mobility Spectrometer High Voltage Formation Circuit","authors":"E. Gromov, M. Matusko, Y. Shaltaeva, V. Pershenkov, V. Belyakov, A. Golovin, E. Malkin, I. Ivanov, V. Vasilyev","doi":"10.1109/MIEL.2019.8889598","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889598","url":null,"abstract":"It was designed dual mode ion mobility spectrometer high voltage formation circuit. The circuit design includes simulation of the dynamic formation of a sinusoidal signal. The simulation of the dynamic formation of a sinusoidal signal is investigated. It is characterized by a high voltage multiplier and several variants of a voltage smoothing filter.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"703 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122987071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving Magnitude Response of Comb Two-Stage Structure Using Simple Multiplierless Filters","authors":"G. Dolecek","doi":"10.1109/MIEL.2019.8889639","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889639","url":null,"abstract":"This paper presents novel two-stage comb-based decimation structure for even decimation factors. First stage and second stages are decimated by $M/2$ and 2, respectively, where $M$ is the decimation factor. In the second stage is the cascade of multiplierless corrector filter and sharpened cascade of the corrector and comb. Filters in second stage improve magnitude characteristic of comb in odd folding bands and decrease comb passband droop. In the first stage is the cascade of comb and multiplierless modified filter. This modified filter improves alias rejection not only in even folding bands, but also in odd folding bands. Method is illustrated with two examples and the corresponding structure is presented. Finally, the method is compared with similar methods in literature.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121134997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation Results of 2.45 GHz Coaxial Antenna with a Ring Slot for Microwave Ablation of a Cancer","authors":"K. Cocic, A. Davidović, D. Sekulić","doi":"10.1109/MIEL.2019.8889592","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889592","url":null,"abstract":"Nowadays cancer is one of the leading causes of morbidity and mortality worldwide. Microwave ablation, as minimally invasive procedure, plays an increasingly important role in the treatment of cancer. In this thermal therapy, microwave energy delivery to a cancer tissue is enabled by electric fields radiated by interstitial antenna operating at microwave frequency. In this study, microwave ablation is numerically evaluated in the context of a liver cancer treatment using 2.45 GHz coaxial antenna with a ring slot. In order to design this antenna prototype and analyze its performance, simulations based on finite element method were done with the COMSOL Multiphysics software. In silico ablation experiments with the proposed antenna were performed using 10 W, 30 W and 50 W input microwave powers and different ablation times. Numerical results showed that the proposed ablation antenna has the ability to achieve a thermal lesion with a preferably spherical shape and clinically relevant volume with a maximum diameter of 3.5 cm using 30 W input microwave power during 10 minutes.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121873348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}