Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET

Abstract

Cylindrical gate all around (CGAA) MOSFET has been studied and the body potential has been simulated and studied. The center and surface potentials models are studied and a comparison is made between the two potential behaviours for a CGAA MOSFET. Moreover, the channel doping concentration and the band diagrams are obtained using the finite element numerical method by solving poisson's equation in the cylindrical coordinate system.