圆柱形栅极-全能MOSFET体电位研究

2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI:10.1109/MIEL.2019.8889640

M. Kessi, A. Benfdila, A. Lakhelef, L. Belhimer, M. Djouder

{"title":"圆柱形栅极-全能MOSFET体电位研究","authors":"M. Kessi, A. Benfdila, A. Lakhelef, L. Belhimer, M. Djouder","doi":"10.1109/MIEL.2019.8889640","DOIUrl":null,"url":null,"abstract":"Cylindrical gate all around (CGAA) MOSFET has been studied and the body potential has been simulated and studied. The center and surface potentials models are studied and a comparison is made between the two potential behaviours for a CGAA MOSFET. Moreover, the channel doping concentration and the band diagrams are obtained using the finite element numerical method by solving poisson's equation in the cylindrical coordinate system.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET\",\"authors\":\"M. Kessi, A. Benfdila, A. Lakhelef, L. Belhimer, M. Djouder\",\"doi\":\"10.1109/MIEL.2019.8889640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cylindrical gate all around (CGAA) MOSFET has been studied and the body potential has been simulated and studied. The center and surface potentials models are studied and a comparison is made between the two potential behaviours for a CGAA MOSFET. Moreover, the channel doping concentration and the band diagrams are obtained using the finite element numerical method by solving poisson's equation in the cylindrical coordinate system.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文研究了圆柱栅极(CGAA) MOSFET，并对其体电位进行了模拟和研究。研究了CGAA MOSFET的中心电势和表面电势模型，并对两种电势行为进行了比较。在柱坐标系下，通过求解泊松方程，利用有限元数值方法得到了通道掺杂浓度和带图。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET

Cylindrical gate all around (CGAA) MOSFET has been studied and the body potential has been simulated and studied. The center and surface potentials models are studied and a comparison is made between the two potential behaviours for a CGAA MOSFET. Moreover, the channel doping concentration and the band diagrams are obtained using the finite element numerical method by solving poisson's equation in the cylindrical coordinate system.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE 31st International Conference on Microelectronics (MIEL)

自引率

0.00%

发文量