D. Ukolov, N. A. Chirkov, R. Mozhaev, A. Pechenkin
{"title":"Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures","authors":"D. Ukolov, N. A. Chirkov, R. Mozhaev, A. Pechenkin","doi":"10.1109/MIEL.2019.8889651","DOIUrl":null,"url":null,"abstract":"The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.