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2019 IEEE 31st International Conference on Microelectronics (MIEL)最新文献

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Hardware/Software Co-Design of Wireless LAN Transceiver: A Case Study 无线局域网收发器的软硬件协同设计:一个案例研究
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889653
Z. Stamenkovic, K. Tittelbach-Helmrich, M. Krstic, M. Stojcev, B. Dimitrijevic
{"title":"Hardware/Software Co-Design of Wireless LAN Transceiver: A Case Study","authors":"Z. Stamenkovic, K. Tittelbach-Helmrich, M. Krstic, M. Stojcev, B. Dimitrijevic","doi":"10.1109/MIEL.2019.8889653","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889653","url":null,"abstract":"The paper tackles an extremely important field of hardware/software co-design of wireless communication systems, which makes system and circuit designers aware of the physical implications and limitations, as well as technologists and physicists capable of coping with the system and circuit requirements in terms of power, speed, and data throughput.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design Techniques for Wireless Sensor Network Nodes Powered by Ambient Energy Harvesting 基于环境能量收集的无线传感器网络节点设计技术
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889612
Z. Prijić, A. Prijić, L. Vracar
{"title":"Design Techniques for Wireless Sensor Network Nodes Powered by Ambient Energy Harvesting","authors":"Z. Prijić, A. Prijić, L. Vracar","doi":"10.1109/MIEL.2019.8889612","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889612","url":null,"abstract":"This paper outlines some techniques for the design of wireless sensor networks nodes. The nodes obtain power from small transducers that convert the energy available in their surroundings. Described examples cover thermoelectric and photovoltaic powered nodes, which are realized using off-the-shelf devices. Experimental results obtained by the practical implementation of the nodes in the network are presented. The paper also highlights the potentials of the PCB technology for improving the performances of the nodes.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121310021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generation of Harmonics of Terahertz Radiation in Paraelectrics in a Wide Temperature Range 宽温度范围内准电体中太赫兹辐射谐波的产生
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889649
V. Grimalsky, S. Koshevaya, J. Escobedo-A., Y. Gomez–B
{"title":"Generation of Harmonics of Terahertz Radiation in Paraelectrics in a Wide Temperature Range","authors":"V. Grimalsky, S. Koshevaya, J. Escobedo-A., Y. Gomez–B","doi":"10.1109/MIEL.2019.8889649","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889649","url":null,"abstract":"It is investigated theoretically the generation of higher electromagnetic harmonics of the lower part of terahertz range in nonlinear paraelectrics like SrTiO3. The efficient generation of harmonics is possible when the bias electric field is applied to the crystal to get the quadratic nonlinearity. The initial focusing of the pump first harmonic makes possible to realize the selective generation of proper higher harmonics. In the paraelectric SrTiO3 the efficient harmonic generation occurs in the wide range of temperatures 50 – 200 K.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133528126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Software and Hardware System for Charge Coupled Devices with Interline Transfer of Charge Parameters Monitoring During Radiation Tests 辐射试验中带线间电荷传递的电荷耦合器件的软硬件系统
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889621
V. P. Lukashin, M. Cherniak, A. Akhmetov, A. Nikiforov, A. Ulanova
{"title":"Software and Hardware System for Charge Coupled Devices with Interline Transfer of Charge Parameters Monitoring During Radiation Tests","authors":"V. P. Lukashin, M. Cherniak, A. Akhmetov, A. Nikiforov, A. Ulanova","doi":"10.1109/MIEL.2019.8889621","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889621","url":null,"abstract":"The paper presents a method of device monitoring during radiation testing for charge coupled devices with interline transfer (hereinafter -– CCD). The results of heavy ions, dose rate and total ionizing dose tests are presented together with the description of the developed software and hardware set-up based on the National Instruments platform and on the designed specialized equipment adapted for radiation tests.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132132186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area SiC肖特基二极管中重离子诱导的单事件烧坏:安全工作区域
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889645
P. Gromova, G. Davydov, A. Tararaksin, A. Kolosova, D. Boychenko, V. Vyuginov, V. Luchinin
{"title":"Heavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area","authors":"P. Gromova, G. Davydov, A. Tararaksin, A. Kolosova, D. Boychenko, V. Vyuginov, V. Luchinin","doi":"10.1109/MIEL.2019.8889645","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889645","url":null,"abstract":"Heavy-ion-induced single event burnout (SEB) is studied experimentally for several types of 4H-SiC Schottky power diodes with various bias voltages applied. Safe operating voltage area for each type was defined and analyzed. The comparison with Si power devices was carried out.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116497684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CMOS-Compatible Gas Sensors cmos兼容气体传感器
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889585
L. Filipovic, S. Selberherr
{"title":"CMOS-Compatible Gas Sensors","authors":"L. Filipovic, S. Selberherr","doi":"10.1109/MIEL.2019.8889585","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889585","url":null,"abstract":"As transistor scaling along Moore's law approaches its physical limits, the semiconductor industry has been intensely working on functional integration of devices along the More-than-Moore approach. The integration of sensors, RF circuits, and other functionalities with electronics is enabled by innovations in packaging, three-dimensional integration, and most importantly through the fabrication of multiple components and features on silicon using established technology. With the application of semiconductor metal oxide (SMO) thin films, there is potential for the integration of gas sensors with processing electronics. This manuscript describes SMO gas sensors, their fabrication, and operating techniques which require high temperatures and therefore an integrated microheater. Microheaters require the fabrication of a membrane in order to isolate the high temperature component from other circuitry. Finally, the manuscript looks at recent achievements in engineering of SMO films and in understanding and modeling their sensing mechanism.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132827200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Linear Slot Array Centrally Fed by CPW T-junction for 5G Applications 用于5G应用的CPW t型结集中馈电线性槽阵列
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889644
M. Milijić, B. Jokanović
{"title":"Linear Slot Array Centrally Fed by CPW T-junction for 5G Applications","authors":"M. Milijić, B. Jokanović","doi":"10.1109/MIEL.2019.8889644","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889644","url":null,"abstract":"This paper discusses the design of an array consisting of eight identical rectangular slots for 5G mobile communication applications. The array has low-profile, high-gain, and wide bandwidth radiation properties. The design steps and electromagnetic analysis of a CPW T-junction as feeding element are presented. The radiation characteristics and other array parameters are evaluated with respect to requirements of applications in 5G frequency range 24.25-27.5 GHz.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132449473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of Nanoporous Anodic Aluminum Oxide as a Template Filled with Piezoelectric Materials 纳米多孔阳极氧化铝模板填充压电材料的研究
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889627
T. Tsanev, Mariya Aleksandrova, V. Videkov
{"title":"Study of Nanoporous Anodic Aluminum Oxide as a Template Filled with Piezoelectric Materials","authors":"T. Tsanev, Mariya Aleksandrova, V. Videkov","doi":"10.1109/MIEL.2019.8889627","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889627","url":null,"abstract":"This paper is devoted to method of nanostructuring of piezoelectric potassium niobate (KNbO3) material in order to improve its voltage generating ability for potential application as energy harvesting. The main goal is geometrical structuring of the piezoelectric material to obtain higher piezoelectric voltage per unit volume in comparison with thin non-structured film from the same material. This is possible due to template properties of porous anodic aluminum oxide (AAO). It was found that KNbO3 grown by sputtering in the nanopores of AAO generates an effective piezoelectric voltage of 410 mV from volume of 0.001 cm3 at mass load of 40 g and frequency of 50 Hz. For comparison, non-structured films with thickness lower than 200 nm and area resulting in a volume of 0.00006 cm3 the generated voltage was 1.78 mV, which means that this type of nanostructuring leading to two orders of magnitude increase of the surface-to-volume ration enhances the piezoelectric response 2.3 times.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122092364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry 可编程浮栅MOS晶体管应用于辐射剂量测定的可行性
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889570
S. Ilić, A. Jevtic, S. Stankovic, V. Davidovic
{"title":"Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry","authors":"S. Ilić, A. Jevtic, S. Stankovic, V. Davidovic","doi":"10.1109/MIEL.2019.8889570","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889570","url":null,"abstract":"In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115318460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrical Characteristics of Ag10(As40S30Se30)90 as Resistive Switching Material for Potential Application in Memory Devices 用于存储器件的阻性开关材料Ag10(As40S30Se30)90的电学特性
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889616
K. Čajko, D. Sekulić, D. Petrović, T. Ivetić, S. Lukic-Petrovic
{"title":"Electrical Characteristics of Ag10(As40S30Se30)90 as Resistive Switching Material for Potential Application in Memory Devices","authors":"K. Čajko, D. Sekulić, D. Petrović, T. Ivetić, S. Lukic-Petrovic","doi":"10.1109/MIEL.2019.8889616","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889616","url":null,"abstract":"Complex four-component amorphous chalcogenide glass Ag<inf>10</inf>(AS<inf>40</inf>S<inf>30</inf>Se<inf>30</inf>)<inf>90</inf> was synthesized with the melt quenching technique in cascade regime of heating. In this paper, we are focused on the study of electrical characteristics of semiconductor glass Ag<inf>10</inf>(As<inf>40</inf>S<inf>30</inf>Se<inf>30</inf>)<inf>90</inf> as resistive switching material for potential application in memory devices. Experimental results revealed that bipolar switching mechanism is present in prepared planar shaped Ag/Ag<inf>10</inf>(AS<inf>40</inf>S<inf>30</inf>Se<inf>30</inf>)<inf>90</inf>/Ag glass sample, which is confirmed during multiple cycles at ambient temperature. The observed resistive switching mechanism was attributed to the formation and rupture of the conducting filament. Further, the difference in <tex>$R$</tex><inf>OFF</inf>/R<inf>ON</inf> state indicates large storage potential.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128464742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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