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2019 IEEE 31st International Conference on Microelectronics (MIEL)最新文献

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Artificial Neural Network for Composite Hardness Modeling of Cu/Si Systems Fabricated Using Various Electrodeposition Parameters 基于人工神经网络的不同电沉积参数Cu/Si复合硬度建模
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889610
I. Mladenovic, J. Lamovec, V. Jović, M. Obradov, K. Radulović, D. V. Radović, V. Radojević
{"title":"Artificial Neural Network for Composite Hardness Modeling of Cu/Si Systems Fabricated Using Various Electrodeposition Parameters","authors":"I. Mladenovic, J. Lamovec, V. Jović, M. Obradov, K. Radulović, D. V. Radović, V. Radojević","doi":"10.1109/MIEL.2019.8889610","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889610","url":null,"abstract":"Copper coatings are produced on silicon wafer by electrodeposition (ED) for various cathode current densities. The resulting composite systems consist of 10 μm monolayered copper films electrodeposited from sulphate bath on Si wafers with sputtered layers of Cr/Au. Hardness measurements were performed to evaluate properties of the composites. The composite hardness (Hc) was characterized using Vickers microindentation test. Then, an artificial neural network (ANN) model was used to study the relationship between the parameters of metallic composite and their hardness. Two experimental values: applied load during indentation test and current density during the ED process were used as the inputs to the neural network. Finally, the results of the composite hardness (experimental and predicted) were used to estimate the film hardness (Hf) of copper for each variations of the current density. This article shows that ANN is an useful tool in modeling composite hardness change with variation of experimental parameters predicting hardness change of composite Si/Cu with average error of 6 %. Using created ANN model it is possible to predict microhardness of Cu film for current density or indentation load for which we do not have experimental data.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123834941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation MOS电容器中HfO2和SiO2在γ和X辐射场中的辐射特性比较
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889613
S. Stankovic, D. Nikolić, N. Kržanović, L. Nadjdjerdj, V. Davidovic
{"title":"Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation","authors":"S. Stankovic, D. Nikolić, N. Kržanović, L. Nadjdjerdj, V. Davidovic","doi":"10.1109/MIEL.2019.8889613","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889613","url":null,"abstract":"The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116943559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of Endspoiling on Microchannel Plate Performance 末端腐蚀对微通道板性能的影响
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889620
A. Stanković, I. Zlatković, R. Nikolov, B. Brindić, D. Pantić
{"title":"Effects of Endspoiling on Microchannel Plate Performance","authors":"A. Stanković, I. Zlatković, R. Nikolov, B. Brindić, D. Pantić","doi":"10.1109/MIEL.2019.8889620","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889620","url":null,"abstract":"Microchannel plate (MCP) as a key part of image intensifiers is an electron multiplier device. It consists of several million very thin, conductive glass channels (4–25 micrometers in diameter) fused together. Each channel functions as an independent electron multiplier according to the principle of secondary emission of an electron. During the final stage of manufacturing an MCP, an electrode is evaporated onto the input and output surface of the MCP [1]. During evaporation of the output electrode, the coating penetrates each pore by a depth of about 2 pore diameters which leads to removing the secondary emission characteristic from the end of the MCP pore. Its effect on gain and spatial resolution will be depicted in this paper. As well as the influence of deposited layer thickness on surface resistance.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116896161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-phase ring-coupled oscillator for TDC using a differential inverter with an oscillation frequency booster circuit 用于TDC的多相环耦合振荡器采用带振荡频率升压电路的差动逆变器
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889635
T. Shima, S. Kozuki, T. Otsuka, N. Retdian
{"title":"Multi-phase ring-coupled oscillator for TDC using a differential inverter with an oscillation frequency booster circuit","authors":"T. Shima, S. Kozuki, T. Otsuka, N. Retdian","doi":"10.1109/MIEL.2019.8889635","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889635","url":null,"abstract":"A multi-phase ring coupled oscillator is a time measuring component of a time-to-digital converter (TDC). The proposed multi-phase ring coupled oscillator consists of a differential inverter ring oscillator. For improving the time resolution, an enhanced sub-oscillator is added to boost the oscillation frequency. Oscillation mode analysis and the start-up technique discussed are for the multi-phase ring coupled oscillator to oscillate in a specified mode. The proposed circuit performance simulates by CADENCE hspiceD. The simulation model used is a 0.18um 1-poly 5-metal CMOS transistor model.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115351075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Ternary CMOS Schemes for Many-Valued Logic Systems 多值逻辑系统的三元CMOS方案仿真
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889590
A. Krasnyuk, A. Prozorova
{"title":"Simulation of Ternary CMOS Schemes for Many-Valued Logic Systems","authors":"A. Krasnyuk, A. Prozorova","doi":"10.1109/MIEL.2019.8889590","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889590","url":null,"abstract":"Of interest is the possibility of implementing many-valued logic systems using traditional CMOS technologies. We considered an example of the implementation of three-valued logic elements based on symmetric 3vL logic using the values {-,0,+}, {-1.0, + 1}, {1,0,1}, {1,0,1} etc. From the totality of obtained results, it can be assumed that ternary CMOS logic can be fully implemented according to norms of 28–180 nm with minimal changes for design rules.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115547719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices 降低双极器件的低剂量率灵敏度(RLDRS)
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889624
V. Pershenkov, A. Bakerenkov, A. Rodin, V. Felitsyn, V. Telets, V. Belyakov
{"title":"Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices","authors":"V. Pershenkov, A. Bakerenkov, A. Rodin, V. Felitsyn, V. Telets, V. Belyakov","doi":"10.1109/MIEL.2019.8889624","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889624","url":null,"abstract":"Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126414410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Practical Evaluation of Optocouplers TID-Hardness Research Method Using an X-ray Unit 光耦合器tid硬度的实用评价
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889615
S. Novikov, M. Cherniak, R. Mozhaev, D. Boychenko
{"title":"Practical Evaluation of Optocouplers TID-Hardness Research Method Using an X-ray Unit","authors":"S. Novikov, M. Cherniak, R. Mozhaev, D. Boychenko","doi":"10.1109/MIEL.2019.8889615","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889615","url":null,"abstract":"The article describes an optoisolators radiation hardness testing method to the effects of absorbed dose using an x-ray unit. Technological issues and features of the research are highlighted.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126190402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of a Bridgeless Single Stage PFC based on LLC Resonant Converter for Regulating Output Voltage 基于LLC谐振变换器的无桥单级PFC输出电压调节分析
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889588
R. Beiranvand, S. Salehirad, S. Esmailirad
{"title":"Analysis of a Bridgeless Single Stage PFC based on LLC Resonant Converter for Regulating Output Voltage","authors":"R. Beiranvand, S. Salehirad, S. Esmailirad","doi":"10.1109/MIEL.2019.8889588","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889588","url":null,"abstract":"This paper has analysis a single stage bridgeless power factor correction converter based on a LLC resonant converter. The analysis is taken under DCM condition under the resonant frequency in BOOST region. Operation under DCM condition leads into natural power factor correction, in addition the operation under the resonant frequency leads into zero voltage switching (ZVS) for the MOSFETs and zero current switching (ZCS) for the diodes. The frequency modulation technique is synchronized with pulse width modulation technique in which they are both used in the converter analysis. In addition, the both mentioned techniques have achieved more open wide control degree in system designing in contrary with conventional methods. The converter has been analyzed in three subintervals of the duty-cycle because of DCM mode. This converter was implemented in laboratory by 100 DC volt output voltage and AC input voltage by 200 watt output load.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"19 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127339545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs) 基于hfox的电阻式随机存取存储器(reram)结构与电特性的深入研究
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889619
B. Attarimashalkoubeh, Y. Leblebici
{"title":"In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs)","authors":"B. Attarimashalkoubeh, Y. Leblebici","doi":"10.1109/MIEL.2019.8889619","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889619","url":null,"abstract":"The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the reset process. In this work, we investigated more than 18 different HfO2-based ReRAMs to control the variation issue, and different structural modification approaches have been studied. In the implementation of bi oxide HfO2-based ReRAMs, the competency of the secondary oxide information of oxide in competition with Hf ions have been investigated and proved to affect the resistive switching significantly. Besides, the effect of the Ti buffer layer on the performance of HfO2-based ReRAMs have been investigated.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129741131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast Switching of the Polarity of Dual Mode Ion Mobility Spectrometer 双模离子迁移谱仪极性的快速切换
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889591
V. Pershenkov, V. Belyakov, Y. Shaltaeva, E. Malkin, A. Golovin, I. Ivanov, V. Vasilyev, M. Matusko, E. Gromov
{"title":"Fast Switching of the Polarity of Dual Mode Ion Mobility Spectrometer","authors":"V. Pershenkov, V. Belyakov, Y. Shaltaeva, E. Malkin, A. Golovin, I. Ivanov, V. Vasilyev, M. Matusko, E. Gromov","doi":"10.1109/MIEL.2019.8889591","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889591","url":null,"abstract":"The ion mobility spectrometer with a fast switching of the polarity of the drift field is designed for alternate, incessant detection of positive and negative ions from nonradioactive active ionization source. It were also solved the problems of dielectric absorption on the collector and voltage stabilization on the protective ion grid.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114973404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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