发布求助
文献互助 智能选刊 最新文献

2019 IEEE 31st International Conference on Microelectronics (MIEL)最新文献

筛选
英文 中文
Determination Method for Interface State Densities Adapted to Ultrathin Dielectrics 适用于超薄介质的界面态密度测定方法
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889574
N. Novkovski, A. Skeparovski
{"title":"Determination Method for Interface State Densities Adapted to Ultrathin Dielectrics","authors":"N. Novkovski, A. Skeparovski","doi":"10.1109/MIEL.2019.8889574","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889574","url":null,"abstract":"In this paper modified Terman method for determination of interface state densities, adapted for nanosized dielectrics has been applied to the case of Al-gated MIS structures containing ultrathin (2.56 nm to 5.15 nm thick) SiO2 dielectric layer. It has been demonstrated that modified Terman method is effective in precise determination of interface states density distributions for nannosized SiO2 dielectric SiO2 layers. Tails towards the band edges are not present when using this method. For all three samples a peak around 0.3 eV is observed. It corresponds to the first peak of the Pb defect. Second peak corresponding to the Pb defect cannot be clearly distinguished due to the presence of a peak related to Al gate.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"90 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121309932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reviewing MXenes for Plasmonic Applications: Beyond Graphene MXenes在等离子体中的应用:超越石墨烯
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889632
Z. Jakšić, M. Obradov, O. Jakšić, D. Tanasković, D. V. Radović
{"title":"Reviewing MXenes for Plasmonic Applications: Beyond Graphene","authors":"Z. Jakšić, M. Obradov, O. Jakšić, D. Tanasković, D. V. Radović","doi":"10.1109/MIEL.2019.8889632","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889632","url":null,"abstract":"MXenes are an emerging class of two-dimensional (2D) materials consisting of carbides, nitrides or carbonitrides of early transition metals. Due to the metallic type of conductivity of MXenes and their 2D structure, they are an ideal candidate to replace the conductive materials currently used in plasmonics, especially graphene. However, the use of MXenes for plasmonics and metamaterials is in its embryonal stage and practically all relevant publications appeared in the last few years. In this contribution we first consider some methods of MXenes fabrication. We continue by analyzing the optical and electronic properties of MXenes of interest for plasmonics (especially spectral dispersion of complex relative dielectric permittivity). We proceed by reviewing some reported applications of MXenes in plasmonics, including among others conventionally designed chemical and biological sensors based on surface plasmon resonance (SPR), metasurface-based optical absorbers and MXene-based nanoantennas, as well as some possible applications in nonlinear optics. In addition to that, we propose some novel uses of MXenes in plasmonics, including chemical and biological nanosensors, superabsorbers with a variable widths of the nanoholes, etc. It is our opinion that the applications of MXenes in plasmonics introduced until now are only scratching the surface of a vast bulk of potential practical devices, structures and effects.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122520561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication and Characterization of High-k Dielectrics Based Gate Stacks/MOS Capacitors for Advanced CMOS Devices 用于先进CMOS器件的高k介电基栅极堆叠/MOS电容器的制造与表征
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889586
R. Vaid, R. Gupta
{"title":"Fabrication and Characterization of High-k Dielectrics Based Gate Stacks/MOS Capacitors for Advanced CMOS Devices","authors":"R. Vaid, R. Gupta","doi":"10.1109/MIEL.2019.8889586","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889586","url":null,"abstract":"This paper presents the fabrication and characterization of various sets of gate stacks: n-Si/SiO2/ALD-HfO2/Ti-Pt, n-Si/SiON/ALD-HfO2/Ti-Pt, n-Si/SiON/ALD-ZrO2/Ti-Pt and n-Si/SiON/ALD-ZrON/Ti-Pt under N2 and NH3 as annealing ambients. The XRD, AFM and FTIR characterizations have been performed for their structural and morphological studies; whereas the electrical characterization includes capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) analysis. Electrical parameters such as dielectric constant (k), effective oxide thickness (EOT) and leakage current density (J) have been extracted through C-V, G-V and I-V measurements. The results suggest that SiON growth prior to HfO2, ZrO2 and ZrON deposition has the potential to surmount the problem of high leakage current density and interfacial traps due to sufficient amount of N2 incorporated at their interface. Electrical characterization such as C-V and I-V reveals the improved results for NH3 annealed ZrO2 sample relative to the all other samples in terms of suppressed gate leakage current, increased dielectric constant and reduced EOT.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128319164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Errors Impulses from Single Ionizing Particles in CMOS Triple Majority Gates CMOS三多数门中单电离粒子误差脉冲的模拟
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889596
Yu. V. Katunin, V. Stenin, A. Prozorova
{"title":"Simulation of Errors Impulses from Single Ionizing Particles in CMOS Triple Majority Gates","authors":"Yu. V. Katunin, V. Stenin, A. Prozorova","doi":"10.1109/MIEL.2019.8889596","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889596","url":null,"abstract":"This work presents the TCAD simulation of the 65-nm bulk CMOS Triple Majority Gate as resistant to the single-event transients. The charge collection from the track of a single nuclear particle simulates as impacted at the every transistors of the gate which leads to the noise pulse of the output of this gate. The TCAD simulation used the tracks along the normal to the chip surface with input track points at the each transistor. The linear energy transfer to the track is 60 MeV ·cm2/mg.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127840934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Performance Evaluation of Block-Based Adaptive Algorithms 基于块的自适应算法的性能评价
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889607
T. Nikolic, T. Talaśka, G. Nikolic, R. Dlugosz
{"title":"Performance Evaluation of Block-Based Adaptive Algorithms","authors":"T. Nikolic, T. Talaśka, G. Nikolic, R. Dlugosz","doi":"10.1109/MIEL.2019.8889607","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889607","url":null,"abstract":"Performance of real-time digital signal processing systems is limited by their data computing capability. Therefore, evaluation of different architectures to determine the most efficient one is an important task. An efficient architecture for the implementation of block-based least mean square (LMS) adaptive filter is presented in this paper. In order to achieve lower adaptation delay different methods for optimization are used. Proposed solution is implemented in FPGA technology. Adaptive filters with different orders and block lengths are analyzed. Simulation results indicate that, compared to sample by sample based algorithm, the adaptation delay may be reduced by up to $N$ times, where $N$ is the block size of input data samples.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133602001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Verification of VHDL-AMS Simulation Model for Digitally Programmable Monolithic Instrumentation Amplifiers 数字可编程单片仪表放大器VHDL-AMS仿真模型的验证
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889618
I. Pandiev
{"title":"Verification of VHDL-AMS Simulation Model for Digitally Programmable Monolithic Instrumentation Amplifiers","authors":"I. Pandiev","doi":"10.1109/MIEL.2019.8889618","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889618","url":null,"abstract":"This paper focuses on verification of VHDL-AMS model [1] for digitally programmable monolithic instrumentation amplifiers. The modeling parameters are extracted for commercially available in-amp AD8253 from Analog Devices, by analyzing semiconductor data books or through characterization measurements. The values for the static and dynamic parameters obtained by simulation of the proposed model are compared against the typical values of the corresponding parameters from the datasheets for the real device at different gains $A_{V}$ and temperature 300 K. The proposed model shows good agreement between typical values and simulated results. Furthermore, the maximum value of the relative error does not exceed 8 %. The validation of the model is performed at differential and common-mode input signals by comparing the simulation results with the behavior of the SPICE compatible macro-model for in-amp AD8253.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123506489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards Portable Thermal Vacuum Sensor-Consideration of Electrical Building Blocks and Compact Housing 走向便携式热真空传感器——对电气构件和紧凑型外壳的考虑
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889629
D. Randjelović, P. Poljak, M. Sarajlić, M. Vorkapić, M. Frantlović, D. Tanasković, B. Popović
{"title":"Towards Portable Thermal Vacuum Sensor-Consideration of Electrical Building Blocks and Compact Housing","authors":"D. Randjelović, P. Poljak, M. Sarajlić, M. Vorkapić, M. Frantlović, D. Tanasković, B. Popović","doi":"10.1109/MIEL.2019.8889629","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889629","url":null,"abstract":"Multipurpose ICTM thermopile-based MEMS sensors have been successfully demonstrated as gas flow sensor, vacuum sensor, thermal converter and gas type sensor. Apart from further improvement of the sensor's design and performances, one direction of research is working towards realization of portable thermal devices. The aim of this paper is to present preliminary considerations of electrical building blocks and compact housing neccessary to realize a portable thermal vacuum device.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"22 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127050934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Absorptive Filters in the Realization of RCIED Activation Jamming 吸收滤波器在实现RCIED激活干扰中的应用
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889582
A. Lebl, M. Mileusnic, B. Pavić, J. Radivojević
{"title":"Absorptive Filters in the Realization of RCIED Activation Jamming","authors":"A. Lebl, M. Mileusnic, B. Pavić, J. Radivojević","doi":"10.1109/MIEL.2019.8889582","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889582","url":null,"abstract":"This paper presents the realization of absorptive filters in RCIED activation jammer. The measured filter characteristics satisfactory agree with the simulated characteristics. The main goal is to achieve sufficient degree of reflected signal attenuation (absorption), and not to provide high signal attenuation in stop-band in forward direction. It is proved that for such behaviour it is enough to implement simple first-order bandpass absorptive filters. These filters are realized as lumped (RLC) structures for relatively lower frequencies and as microstrip filters for higher frequencies. The jammer with the embedded absorptive filters is verified for military applications.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical Characterization of Microbial Fuel Cells – Method and Preliminary Results 微生物燃料电池的电特性。方法和初步结果
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889650
Danijela Randjelovic, O. Jakšić, B. Popović, K. Joksimovic, Srđan Miletić, P. Poljak, V. Beškoski
{"title":"Electrical Characterization of Microbial Fuel Cells – Method and Preliminary Results","authors":"Danijela Randjelovic, O. Jakšić, B. Popović, K. Joksimovic, Srđan Miletić, P. Poljak, V. Beškoski","doi":"10.1109/MIEL.2019.8889650","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889650","url":null,"abstract":"Microbial fuel cells (MFC) present bioelectrochemical systems that allow generation of electricity during anaerobic respiration of selected bacterial species. They have very promising applications in wastewater purification systems, as biosensors or as alternative power source. This work is a result of joint multidisciplinary research and presents preliminary experimental results obtained by electrical characterization of a single-chamber MFC. The goal of research was to study activity of MFC and estimate its internal resistance.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115659043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling Noise and Stability of Affinity-Based MEMS, NEMS and NOEMS Sensors of Ternary Gas Mixtures 基于亲和的三元混合气体MEMS、NEMS和NOEMS传感器的建模噪声和稳定性
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889577
O. Jakšić, I. Jokić, Z. Jakšić, M. Obradov, D. Tanasković, D. Randjelović, D. V. Radović
{"title":"Modeling Noise and Stability of Affinity-Based MEMS, NEMS and NOEMS Sensors of Ternary Gas Mixtures","authors":"O. Jakšić, I. Jokić, Z. Jakšić, M. Obradov, D. Tanasković, D. Randjelović, D. V. Radović","doi":"10.1109/MIEL.2019.8889577","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889577","url":null,"abstract":"We address noise and stability of adsorption-based sensing of ternary gas mixtures in affinity-based MEMS, NEMS and NOEMS sensors. We investigate mechanisms of such chemical sensing in diverse industrial environments where ternary gas mixtures are of importance. in all existing sensing devices signal fluctuations determine their ultimate performance, and in affinity-based nanodevices the prevailing noise is caused by adsorption and desorption of different species at the sensor surface. We consider analytically and numerically detection of three-component gas mixtures. We present results obtained by applying the conventional method for assessing stability of chemical reactions to three component monolayer adsorption. Gas molecules modeling as spherical particles is suitable for applying any model regarding population dynamics, but taking molecular dimension and orientation into account is more realistic. Noise analysis in time and frequency domain is performed for two different classes of ultrahigh sensitivity adsorption based gas sensors: (nano) plasmonic sensors (refractometric devices) and MEMS/NEMS resonator-based devices.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130146328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信