Simulation of Errors Impulses from Single Ionizing Particles in CMOS Triple Majority Gates

Abstract

This work presents the TCAD simulation of the 65-nm bulk CMOS Triple Majority Gate as resistant to the single-event transients. The charge collection from the track of a single nuclear particle simulates as impacted at the every transistors of the gate which leads to the noise pulse of the output of this gate. The TCAD simulation used the tracks along the normal to the chip surface with input track points at the each transistor. The linear energy transfer to the track is 60 MeV ·cm2/mg.