2019 IEEE 31st International Conference on Microelectronics (MIEL)最新文献

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Flexible Oxide-Polymeric Composites for Piezoelectric Energy Harvesting 用于压电能量收集的柔性氧化物-聚合物复合材料
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889602
Mariya Aleksandrova, G. Kolev, Y. Vucheva, I. Pandiev, K. Denishev
{"title":"Flexible Oxide-Polymeric Composites for Piezoelectric Energy Harvesting","authors":"Mariya Aleksandrova, G. Kolev, Y. Vucheva, I. Pandiev, K. Denishev","doi":"10.1109/MIEL.2019.8889602","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889602","url":null,"abstract":"In this study is presented technology for fabrication of a piezoelectric element as an alternative energy source (energy harvesting). The elements are produced on flexible polyethylene naphthalate (PEN) substrates and consist of novel lead-free nanocomposite [Ga-doped ZnO (GZO) - polyvinylidene fluoride (PVDF)]. The oxide film is deposited by vacuum radiofrequency (RF) sputtering and PVDF is pulverized by spray coating system. Aluminum and gold metal coatings are investigated as electrodes for optimal extraction of the generated electric energy from the piezoelectric coating. It was showed that PVDF spray deposition reduces the surface roughness of GZO film with 1.4 %. Piezoelectric response is measured at different applied dynamic loads with the two types of electrodes, as well as for oxide-only film. It was found that PVDF based composite leads to improved interface conditions for electrode coating, such as low parasitic capacitances. The highest obtained piezoelectric voltage is ~ 586 mV at 40 g mass weight load with frequency of 50 Hz for gold coated GZO+PVDF. This voltage is 41% higher and more stable in the time sweep in comparison with the case at PVDF-free piezoelectric film, and 29% higher than the composite element, but with aluminum electrode. The interface capacitance is 3 orders of magnitude lower (nF vs µF) and the contact resistance is 15 times smaller (Ω vs kΩ) when the interfaces are with gold, which optimizes the electric energy collection and enhances the energy harvesting performance.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128413109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VHDL-AMS Model Development for Digitally Programmable Monolithic Instrumentation Amplifiers 数字可编程单片仪表放大器的VHDL-AMS模型开发
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889608
I. Pandiev
{"title":"VHDL-AMS Model Development for Digitally Programmable Monolithic Instrumentation Amplifiers","authors":"I. Pandiev","doi":"10.1109/MIEL.2019.8889608","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889608","url":null,"abstract":"A simple behavioral model has been developed for monolithic instrumentation amplifiers (in-amps) with digitally programmable gains. The model is based on the physical structure of the three - operational amplifiers in-amp (3-op amps in-amp) topology. In comparison with SPICE-based simulation standard macro-model the proposed model uses a reduced number of nodes and has shorter simulation time, without limiting the number of modeled electrical parameters. The in-amp model is implemented by using very-high hardware description language (VHDL) analog and mixed-signal language (VHDL-AMS), and accurately simulates the static and dynamic electrical parameters. The VHDL-AMS code is created on the basis of set of analytical equations and is adapted to the simulators of the Systemvision® (version 5.5) and the Systemvision® Cloud environment.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"17 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131076651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Rare-Earth Ions on Electrical Properties of BaTiO3 Ceramics 稀土离子对BaTiO3陶瓷电性能的影响
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889575
V. Paunovic, M. Đorđević, V. Mitić, Z. Prijić
{"title":"Effect of Rare-Earth Ions on Electrical Properties of BaTiO3 Ceramics","authors":"V. Paunovic, M. Đorđević, V. Mitić, Z. Prijić","doi":"10.1109/MIEL.2019.8889575","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889575","url":null,"abstract":"The effect of rare earth ions on dielectric permittivity, dielectric losses and microstructure of barium titanate ceramics doped with Ho, Er and Yb at the concentrations of 0.05 wt% to 1.0 wt% was investigated. The doped BaTiO3 were obtained by solid-state sintering reaction at a temperature of 1320°C in air atmosphere. The electrical properties were measured in the temperature interval from 30°C to 180°C at different frequencies. The results of electrical investigation showed that samples doped with a low additives concentration, with a spherical and large grains, have high dielectric constant value. εrat Curie temperature is 4250, 3828 and 3011 for 0.05 wt% Ho, Er and Yb respectively. By increasing dopant concentration and decreasing grain size, the dielectric permittivity value decreases. All investigated samples have low values of dielectric losses ranged from 0.01 to 0.09. Also, samples with a low concentration of additives follow Curie-Weiss‘s law. The Curie temperature of doped samples is slightly lower than Curie temperature of the undoped ceramics and it is 126-128 °C. The Curie constant $C$ for all examined samples increases with increasing dopant concentration, so that the highest values were measured for the samples doped with 1.0 wt% of the additive.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129772629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Estimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si 基于Pd-Ta2O5-SiO2-Si结构的MISFET集成氢传感器误差估计
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889631
B. Podlepetsky, A. Kovalenko
{"title":"Estimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si","authors":"B. Podlepetsky, A. Kovalenko","doi":"10.1109/MIEL.2019.8889631","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889631","url":null,"abstract":"We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125306368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Intrinsic Stochastic Fluctuations of the Time Response of Adsorption-Based Microfluidic Bio/Chemical Sensors: the Case of Bianalyte Mixtures 基于吸附的微流体生物/化学传感器时间响应的固有随机波动分析:以双分析物混合物为例
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889579
I. Jokić, Z. Djuric, K. Radulović, M. Frantlović, P. Krstajić
{"title":"Analysis of Intrinsic Stochastic Fluctuations of the Time Response of Adsorption-Based Microfluidic Bio/Chemical Sensors: the Case of Bianalyte Mixtures","authors":"I. Jokić, Z. Djuric, K. Radulović, M. Frantlović, P. Krstajić","doi":"10.1109/MIEL.2019.8889579","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889579","url":null,"abstract":"Real-time in situ operation of bio/chemical sensors assumes detection of chemical substances or biological specimens in samples of complex composition. Since sensor selectivity cannot be ideal, adsorption of particles other than target particles inevitably occur on the sensing surface. That affects the sensor response and its intrinsic fluctuations which are caused by stochastic fluctuations of the numbers of adsorbed particles of all the adsorbing substances. In microfluidic sensors, such response fluctuations are a result of coupled adsorption, desorption and mass transfer (convection and diffusion) processes of analyte particles. Analysis of these fluctuations is important because they constitute the adsorption-desorption noise, which limits the sensing performance. In this work we perform the analysis of fluctuations by using a stochastic model of sensor response after the steady state is reached, in the case of two-analyte adsorption, considering mass transfer processes. The results enable estimation of the ultimate sensing performance of adsorption-based microfluidic bio/chemical sensors of different sensing areas, operating in bianalyte mixture environments.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117162727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications SiC肖特基势垒二极管的基本电流机制:物理模型、实验验证和启示
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889628
S. Dimitrijev, J. Nicholls, P. Tanner, J. Han
{"title":"The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications","authors":"S. Dimitrijev, J. Nicholls, P. Tanner, J. Han","doi":"10.1109/MIEL.2019.8889628","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889628","url":null,"abstract":"In this paper, we derive the equations for the current-voltage characteristics of SiC Schottky barrier diodes from the fundamental physics of thermionic emission and tunneling, as the two fundamental current mechanisms. An excellent fit between the model and the experimental data is achieved without the need for empirical fitting parameters, such as the commonly used ideality factor, and with a single set of physically meaningful parameters. This result shows that the current transport in the measured SiC Schottky diodes is not dominated by defects.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124734767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microcontroller's Sensitivity to Voltage Pulse Series in Comparison with a Single Voltage Pulse 单片机对电压脉冲串和单脉冲的灵敏度比较
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889638
A. Shemonaev, K. Epifantsev, P. Skorobogatov, A. Nikiforov
{"title":"Microcontroller's Sensitivity to Voltage Pulse Series in Comparison with a Single Voltage Pulse","authors":"A. Shemonaev, K. Epifantsev, P. Skorobogatov, A. Nikiforov","doi":"10.1109/MIEL.2019.8889638","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889638","url":null,"abstract":"The paper presents the results of ARM 32-bit Cortex-M0 and M4 CMOS microcontroller's sensitivity to a series of voltage pulses in comparison to a single pulse – all with damage subthreshold energy. The effect of pulses amount on the device voltage overstress threshold value was found and analyzed.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124953037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Arrays of Bowtie Plasmonic Nanoantennas for Field Enhancement in MOEMS 用于MOEMS场增强的弓形等离子体纳米天线阵列
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889622
M. Obradov, Z. Jakšić, I. Mladenovic, D. Tanasković, O. Jakšić
{"title":"Arrays of Bowtie Plasmonic Nanoantennas for Field Enhancement in MOEMS","authors":"M. Obradov, Z. Jakšić, I. Mladenovic, D. Tanasković, O. Jakšić","doi":"10.1109/MIEL.2019.8889622","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889622","url":null,"abstract":"Many micro(nano)optoelectromechanical systems (MOEMS, NOEMS) require optical (generally, electromagnetic) field localization and concentration. These include for instance photocatalytic microreactors and labs on a chip, where it is necessary to localize optical energy into a fluidic channel. Other examples are chemical and biological sensors. Plasmonics on the other hand ensures field localization down to subwavelength volumes where evanescent fields can be tailored to the shape of minuscule channels in MOEMS and NOEMS. In this work we present a possible approach to the enhancement of optical fields in MOEMS and NOEMS systems where a linear array of plasmonic bowtie structures is used to concentrate the optical field into a dielectric channel. We perform our numerical simulations using the finite element method to analyze field distributions that can be achieved by the use of the bowtie antenna and the possibility to tailor these fields. We also analyze the influence of the shape of the coupled tips of bowties to the field distribution and frequency dispersion. We conclude that arrays of plasmonic bowties could be a promising candidate for optically assisted micro and nanofluidics.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117264298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Temperature over Impedance of Different Inkjet Printed Patterns and Substrates 温度对不同喷墨印刷图案和基板阻抗的影响
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889594
B. Nikolova, G. Nikolov, E. Gieva, I. Ruskova, M. Mladenov
{"title":"Influence of Temperature over Impedance of Different Inkjet Printed Patterns and Substrates","authors":"B. Nikolova, G. Nikolov, E. Gieva, I. Ruskova, M. Mladenov","doi":"10.1109/MIEL.2019.8889594","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889594","url":null,"abstract":"Inkjet printing technology turns out to be a fast-growing technology that, due to its lower cost, is becoming more and more widely used in the production of sensors. The electrical properties and parameters of such sensors are dependent on the type of ink, its composition, the type of the substrate, and the number of printed layers. In this paper, we study the influence of the shape, the type of the substrate and the temperature on the impedance of the printed structures.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124536231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring 基于工艺监控的CMOS IC晶圆批次系列辐射硬度阈值变化的非参数统计分析
2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI: 10.1109/MIEL.2019.8889642
Y. Bogdanov, N. Bogdanova, D. V. Fastovets, Y. Moskovskaya, A. V. Sogojan, A. Nikiforov
{"title":"Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring","authors":"Y. Bogdanov, N. Bogdanova, D. V. Fastovets, Y. Moskovskaya, A. V. Sogojan, A. Nikiforov","doi":"10.1109/MIEL.2019.8889642","DOIUrl":"https://doi.org/10.1109/MIEL.2019.8889642","url":null,"abstract":"Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one the possibility to assess every newly manufactured IC lot by a small sample size to determine whether test sample and the whole lot statistically belong to the previously tested general reference group of samples or not. The approach allows us to minimize the overirradiation factor and obtain a statistically reliable radiation test result even for small-size test samples.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133793758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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