Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring

Y. Bogdanov, N. Bogdanova, D. V. Fastovets, Y. Moskovskaya, A. V. Sogojan, A. Nikiforov
{"title":"Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring","authors":"Y. Bogdanov, N. Bogdanova, D. V. Fastovets, Y. Moskovskaya, A. V. Sogojan, A. Nikiforov","doi":"10.1109/MIEL.2019.8889642","DOIUrl":null,"url":null,"abstract":"Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one the possibility to assess every newly manufactured IC lot by a small sample size to determine whether test sample and the whole lot statistically belong to the previously tested general reference group of samples or not. The approach allows us to minimize the overirradiation factor and obtain a statistically reliable radiation test result even for small-size test samples.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one the possibility to assess every newly manufactured IC lot by a small sample size to determine whether test sample and the whole lot statistically belong to the previously tested general reference group of samples or not. The approach allows us to minimize the overirradiation factor and obtain a statistically reliable radiation test result even for small-size test samples.
基于工艺监控的CMOS IC晶圆批次系列辐射硬度阈值变化的非参数统计分析
考虑了采用非参数统计准则来估计CMOS IC晶圆批次系列的辐射硬度阈值变化。它提供了通过小样本量评估每个新生产的IC批次的可能性,以确定测试样本和整个批次在统计上是否属于先前测试的一般参考样本组。该方法使我们能够最小化过辐照因素,即使对于小尺寸的测试样品,也能获得统计上可靠的辐射测试结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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