{"title":"基于Pd-Ta2O5-SiO2-Si结构的MISFET集成氢传感器误差估计","authors":"B. Podlepetsky, A. Kovalenko","doi":"10.1109/MIEL.2019.8889631","DOIUrl":null,"url":null,"abstract":"We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Estimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si\",\"authors\":\"B. Podlepetsky, A. Kovalenko\",\"doi\":\"10.1109/MIEL.2019.8889631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Estimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si
We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.