{"title":"基于hfox的电阻式随机存取存储器(reram)结构与电特性的深入研究","authors":"B. Attarimashalkoubeh, Y. Leblebici","doi":"10.1109/MIEL.2019.8889619","DOIUrl":null,"url":null,"abstract":"The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the reset process. In this work, we investigated more than 18 different HfO2-based ReRAMs to control the variation issue, and different structural modification approaches have been studied. In the implementation of bi oxide HfO2-based ReRAMs, the competency of the secondary oxide information of oxide in competition with Hf ions have been investigated and proved to affect the resistive switching significantly. Besides, the effect of the Ti buffer layer on the performance of HfO2-based ReRAMs have been investigated.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs)\",\"authors\":\"B. Attarimashalkoubeh, Y. Leblebici\",\"doi\":\"10.1109/MIEL.2019.8889619\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the reset process. In this work, we investigated more than 18 different HfO2-based ReRAMs to control the variation issue, and different structural modification approaches have been studied. In the implementation of bi oxide HfO2-based ReRAMs, the competency of the secondary oxide information of oxide in competition with Hf ions have been investigated and proved to affect the resistive switching significantly. Besides, the effect of the Ti buffer layer on the performance of HfO2-based ReRAMs have been investigated.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889619\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs)
The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the reset process. In this work, we investigated more than 18 different HfO2-based ReRAMs to control the variation issue, and different structural modification approaches have been studied. In the implementation of bi oxide HfO2-based ReRAMs, the competency of the secondary oxide information of oxide in competition with Hf ions have been investigated and proved to affect the resistive switching significantly. Besides, the effect of the Ti buffer layer on the performance of HfO2-based ReRAMs have been investigated.
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