Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices

2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI:10.1109/MIEL.2019.8889624

V. Pershenkov, A. Bakerenkov, A. Rodin, V. Felitsyn, V. Telets, V. Belyakov

引用次数: 1

Abstract

Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.

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降低双极器件的低剂量率灵敏度(RLDRS)

描述了双极器件低剂量率灵敏度降低的可能物理机制。灵敏度的降低可以与有效费米能级相对于受体和供体辐射诱导的界面阱的特定位置有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 31st International Conference on Microelectronics (MIEL)

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