Electrical Characteristics of Ag10(As40S30Se30)90 as Resistive Switching Material for Potential Application in Memory Devices

Complex four-component amorphous chalcogenide glass Ag10(AS40S30Se30)90 was synthesized with the melt quenching technique in cascade regime of heating. In this paper, we are focused on the study of electrical characteristics of semiconductor glass Ag10(As40S30Se30)90 as resistive switching material for potential application in memory devices. Experimental results revealed that bipolar switching mechanism is present in prepared planar shaped Ag/Ag10(AS40S30Se30)90/Ag glass sample, which is confirmed during multiple cycles at ambient temperature. The observed resistive switching mechanism was attributed to the formation and rupture of the conducting filament. Further, the difference in $R$OFF/RON state indicates large storage potential.