Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry

Abstract

In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation.