{"title":"High-Voltage Pulse Trimming of Thick-Film Resistors - Some Modelling Aspects","authors":"I. Stanirnirović, Z. Stanimirović","doi":"10.1109/MIEL.2019.8889587","DOIUrl":null,"url":null,"abstract":"Novel applications of thick-film technology require precision trimming of thick-film resistors that are being used as both resistive and sensing elements. High-voltage pulse trimming provides high precision trimming leaving the resistor body undamaged and resistor geometry intact. This paper introduces an adapted statistical bimodal bond conductance approach to analysis of high-voltage pulse trimmed thick-film resistors. Application of high-voltage pulses causes transitions from contact conductance to tunneling conductance and vice versa in resistors whose disordered structure is being presented using 3D planar random resistor network.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Novel applications of thick-film technology require precision trimming of thick-film resistors that are being used as both resistive and sensing elements. High-voltage pulse trimming provides high precision trimming leaving the resistor body undamaged and resistor geometry intact. This paper introduces an adapted statistical bimodal bond conductance approach to analysis of high-voltage pulse trimmed thick-film resistors. Application of high-voltage pulses causes transitions from contact conductance to tunneling conductance and vice versa in resistors whose disordered structure is being presented using 3D planar random resistor network.