基于InGaN、GaN和AlInGaP异质结构的led辐射硬度评价

2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-01 DOI:10.1109/MIEL.2019.8889651

D. Ukolov, N. A. Chirkov, R. Mozhaev, A. Pechenkin

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引用次数: 4

摘要

给出了基于InGaN、GaN和AlInGaP结构的发光二极管(LED)在光谱的绿、蓝、红区域和白光区域的辐射硬度结果。描述了暴露期间监测参数的技术方面，并给出了led对各种辐射暴露的响应。

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Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures

The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.

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来源期刊

2019 IEEE 31st International Conference on Microelectronics (MIEL)

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