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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT 基于gaas - pin光电二极管和PJBT的单片集成光电接收机的新概念
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730220
F. Dillmann, P. Brennemann, H. Hardtdegen, M. Marso, M. Loken, P. Kordos, H. Luth, F. Tegude, J. Kwaspen, L. Kaufmann
{"title":"A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT","authors":"F. Dillmann, P. Brennemann, H. Hardtdegen, M. Marso, M. Loken, P. Kordos, H. Luth, F. Tegude, J. Kwaspen, L. Kaufmann","doi":"10.1109/ASDAM.1998.730220","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730220","url":null,"abstract":"We have developed a new concept for an optoelectronic frontend receiver at 0.85 /spl mu/m wavelength. A GaAs-PIN photodiode is coupled to a Permeable Junction Base Transistor (PJBT). The PJBT is a vertical Junction Field Effect Transistor with a homoepitaxial, heavily p-doped gate whose n-doped GaAs channel is selectively grown. Its layer structure incorporates two p-i-n doped layer structures, so it fits ideally to an integration with a PIN photodiode. The fabrication of the integration is described and results of the single devices, both DC and RF measurements, are presented. The performance of the first integrated receiver show the usefulness of this concept for Optoelectronic Integrated Circuits (OEIC) at bitrates of more than 1 Gbit/s.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129884673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of semiconductor structures through capacitance techniques 利用电容技术研究半导体结构
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730155
Peter Gumik, L. Harmatha, O. Csabay
{"title":"Investigation of semiconductor structures through capacitance techniques","authors":"Peter Gumik, L. Harmatha, O. Csabay","doi":"10.1109/ASDAM.1998.730155","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730155","url":null,"abstract":"Precise and fast computer-aided measurements, parameters extraction and suitable data visualisation are nowadays necessary for many applications as development, production and quality control of semiconductor devices. In order to investigate such devices as metal-insulator-semiconductor structures, and devices with p-n junction or another rectifying contact an apparatus for high frequency capacitance versus voltage and for capacitance versus time techniques has been designed and constructed by means of these methods one can determine critical parameter for device characterisation.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126279394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices 硅基硬玻璃层技术及其在微波半导体器件中的应用
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730177
M. Grabowski, W. Jabłoński
{"title":"The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices","authors":"M. Grabowski, W. Jabłoński","doi":"10.1109/ASDAM.1998.730177","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730177","url":null,"abstract":"Paper describes the method of preparing of hard glass layers on silicon substrates. The thickness of the wafers run from few to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127842122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical investigations of the large signal dynamic admittance of the transferred electron devices 转移电子器件大信号动态导纳的数值研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730196
M. Suchecka
{"title":"Numerical investigations of the large signal dynamic admittance of the transferred electron devices","authors":"M. Suchecka","doi":"10.1109/ASDAM.1998.730196","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730196","url":null,"abstract":"In the paper results of the full characterization of the Gunn diode's frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED's is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED's in the frequency bands above 40 GHz.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"42 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120860520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transition between coherent to incoherent superlattices transport 相干到非相干超晶格之间的跃迁
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730215
C. Rauch, G. Strasser, E. Gornik
{"title":"Transition between coherent to incoherent superlattices transport","authors":"C. Rauch, G. Strasser, E. Gornik","doi":"10.1109/ASDAM.1998.730215","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730215","url":null,"abstract":"Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. A significant decreased of the miniband transmission is observed with increasing electric field across the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is assigned to the transition between coherent and incoherent transport.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"10 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115950706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical modelling of single junction a-Si:H solar cells with textured interfaces 具有纹理界面的单结a-Si:H太阳能电池的光学建模
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730199
D. Búc, M. Zeman, J. Metselaar
{"title":"Optical modelling of single junction a-Si:H solar cells with textured interfaces","authors":"D. Búc, M. Zeman, J. Metselaar","doi":"10.1109/ASDAM.1998.730199","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730199","url":null,"abstract":"Optical simulations were carried out in order to understand the effect of scattering at textured interfaces on the optical properties of a single junction a-Si:H solar cell. We used an optical numerical simulator for rite calculation of the absorption profiles in the solar cell. A sensitivity study of the influence of the model scattering parameters on the quantum efficiency of the a-Si:H solar cells was carried out and the most sensitive parameters were determined. From the calculated absorption profiles we have determined the losses in the non-active layers and the gain in the intrinsic layer of the solar cell.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121668692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and structural characterization of nickel oxide films for gas sensor devices 气体传感器用氧化镍薄膜的制备及结构表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730192
I. Hotovy, J. Janı́k, J. Huran, L. Spieß
{"title":"Preparation and structural characterization of nickel oxide films for gas sensor devices","authors":"I. Hotovy, J. Janı́k, J. Huran, L. Spieß","doi":"10.1109/ASDAM.1998.730192","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730192","url":null,"abstract":"Nickel oxide (NiO) thin films were prepared on Si substrates by dc reactive magnetron sputtering from a nickel metal target in Ar+O/sub 2/ with O/sub 2/ content varied from 15 to 50%. The effects of the O/sub 2/ gas content on the deposition rate, structure, composition and electrical properties were investigated. We have found that the good NiO stoichiometric films are obtainable with a polycrystalline structure and a resistivity of near 300 /spl Omega/cm at 25% oxygen content. But either the resistivity or the composition and structure suffer variations with the discharge parameters. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"24 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114027081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Affinity biosensors based on thin organic films on a metal microsystem support 基于金属微系统支撑的有机薄膜亲和生物传感器
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730236
M. Šnejdárková, L. Sokolikova, V. Tvarozek, I. Novotný, T. Hianik
{"title":"Affinity biosensors based on thin organic films on a metal microsystem support","authors":"M. Šnejdárková, L. Sokolikova, V. Tvarozek, I. Novotný, T. Hianik","doi":"10.1109/ASDAM.1998.730236","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730236","url":null,"abstract":"Protein films (PF) on gold microsystem support were used for construction affinity biosensor for detecting human IgE. Antigen Q-SwaHU/IgE was bound with cysteamine or with cystramine-bovine serum albumin (BSA) complex by means of glutaraldehyde and immobilized to the thin gold support working electrode by means of chemisorption. The interaction of IgE with affinity biosensor has been detected by means of conductance. Addition of IgE to the electrolyte contained biosensor with BSA resulted in decrease membrane conductance, which that with BSA resulted in increase of sensor conductance in logarithm shape. in both cases the sensitivity of affinity biosensor was nM level. The mechanisms of biosensor response are discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115902064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micromachined Fabry-Perot optical filters 微机械法布里-珀罗光学滤光片
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/asdam.1998.730218
M. Bartek, J. Correia, R. Wolffenbuttel
{"title":"Micromachined Fabry-Perot optical filters","authors":"M. Bartek, J. Correia, R. Wolffenbuttel","doi":"10.1109/asdam.1998.730218","DOIUrl":"https://doi.org/10.1109/asdam.1998.730218","url":null,"abstract":"The design, fabrication and measured characteristics of micromachined Fabry-Perot (F-P) optical filters for the visible spectral range are presented. Silver films of 40-50 nm thickness, evaporated on a 300 nm thick low-stress silicon nitride membrane, are used as high-quality mirrors. Two parallel mirrors, with a square aperture of up to 2/spl times/2 mm/sup 2/ and initial cavity gap of 1.2 /spl mu/m, form a tunable Fabry-Perot optical filter. One of the mirrors is fixed the other is under tension on a movable Si frame, which is electrostatically defected to control the mirror spacing and parallelism. Results are compared with non-tunable F-P filters that are composed of a Ag/SiN/Ag or Ag/SiO/sub 2//Al layer stack. The FWHM of 40 nm (tunable filter) and 16 nm (non-tunable filter) have been achieved.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124048335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Current status and future of advanced CMOS technologies-digital and analog aspect 先进CMOS技术的现状和未来——数字和模拟两方面
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730153
H. Iwai
{"title":"Current status and future of advanced CMOS technologies-digital and analog aspect","authors":"H. Iwai","doi":"10.1109/ASDAM.1998.730153","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730153","url":null,"abstract":"CMOS LSIs have achieved a great success for these 15 years as the mainstream of the semiconductor for integrated circuits. The progress has been driven by the downsizing of the components in an LSI such as MOSFETs. However, even before the downsizing of MOSFETs reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSIs is going to shift to 0.1 and sub-0.1 /spl mu/m. In this paper, after the brief introduction of the current status of CMOS technology, the anticipated difficulties and some concepts for 0.1 and sub-0.1 /spl mu/m LSIs are explained based on the research of the downsizing MOSFET into such dimension. Also, some new aspects of CMOS application such as RF CMOS technology for mobile telecommunication is briefly described. Finally, further concept for deep-sub-0.1 /spl mu/m LSIs is explained.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121828628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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