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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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SIMS characterization of fluorinated SiO/sub 2/ films 氟化SiO/ sub2 /薄膜的SIMS表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730160
A. Efremov, G. Romanova, V. Litovchenko
{"title":"SIMS characterization of fluorinated SiO/sub 2/ films","authors":"A. Efremov, G. Romanova, V. Litovchenko","doi":"10.1109/ASDAM.1998.730160","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730160","url":null,"abstract":"SIMS depth profiling of two type of fluorinated SiO film before and after /spl gamma/-irradiation have been performed. Analysis of the experimental data based on previous calibration and theoretical studies allow us to reveal correlation between distribution of bounded fluorine and distribution of other native and induced defects in the oxide film. Comparison of SIMS data with the result of computer simulation of /spl gamma/-irradiation induced processes in SiO/sub 2/:F shows that florine may present in SiO/sub 2/ both in \"interstitial\" form and may be included in such structural defects as /spl equiv/Si-F...-Si/spl equiv/, /spl equiv/Si-F...O-Si/spl equiv/, /spl equiv/Si-F...H-Si/spl equiv/. Hypothesis about high mobility of fluorine itself, is not supported by calculations. On the contrary, the high mobility of hydrogen is very important in all studied processes. In particular, /spl gamma/-irradiation leads to transfer of hydrogen from SiH complexes to SiOH ones.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"30 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116642152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo simulations of the transport of sputtered particles 溅射粒子输运的蒙特卡罗模拟
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730167
K. Macek, P. Macek, U. Helmersson
{"title":"Monte Carlo simulations of the transport of sputtered particles","authors":"K. Macek, P. Macek, U. Helmersson","doi":"10.1109/ASDAM.1998.730167","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730167","url":null,"abstract":"A model for Monte Carlo calculation of the transport of sputtered particles is presented which allows to estimate the density of sputtered material in the gas phase of a low pressure DC magnetron discharge. Simulation of DC magnetron sputtering of Cu in 0.1 Pa of Ar using an average target power density 2 W/cm/sup 2/ shows that Cu concentration is below 1% in most of the discharge volume. The influence of the process parameters on the relative Cu density is discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121392626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Nitrogen influence on the properties of the /spl alpha/-C films and /spl alpha/-C/Si heterojunction 氮对/spl α / c薄膜和/spl α / c /Si异质结性能的影响
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730162
T. V. Semikina, A.N. Shmyryeva
{"title":"Nitrogen influence on the properties of the /spl alpha/-C films and /spl alpha/-C/Si heterojunction","authors":"T. V. Semikina, A.N. Shmyryeva","doi":"10.1109/ASDAM.1998.730162","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730162","url":null,"abstract":"An effect of nitrogen on the optical and electrophysical properties of /spl alpha/-C films and /spl alpha/-C/Si heterojunction has been studied. Nitrogen was introduced into a gas mixture within the range of 0 to 45% during the process of chemical-vapour deposition of /spl alpha/-C films. the substantial variations of optical and electrophysical properties of /spl alpha/-C films and /spl alpha/-C/Si heterojunction at different nitrogen concentration were observed. In particular, the character of observed changes has opposite behaviour at nitrogen concentration range of 0-20% and 20-45%. The electron paramagnetic resonance and Auger spectrometry of these samples do not exhibit the nitrogen content in the films. The Raman spectroscopy reveals a diamond phase in the films. An improvement of the diode parameters of /spl alpha/-C/Si heterojunction and changing of permittivity and carrier mobility as a result of nitrogen content in the gas mixture were obtained from I-V and C-V measurements.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114318736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Macrostress formation in thin films and its investigation by X-ray diffraction 薄膜中宏观应力的形成及其x射线衍射研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730205
P. Šutta, Q. Jackuliak
{"title":"Macrostress formation in thin films and its investigation by X-ray diffraction","authors":"P. Šutta, Q. Jackuliak","doi":"10.1109/ASDAM.1998.730205","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730205","url":null,"abstract":"Elastic stresses and strains are almost always present in thin films deposited on substrates. In the majority of cases these stresses are residual stresses, introduced into the system during deposition or subsequent processing and they me mostly biaxial at the thin film substrate interface. Two significant reasons of macrostress formation in thin films can be distinguished thermal and/or epitaxial mismatch between the thin film and substrate thermal coefficients and lattice parameters.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125722859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of pressure treatment on electrical properties of hydrogen-doped silicon 压力处理对掺氢硅电性能的影响
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730163
B. Surma, A. Misiuk, J. Jun, M. Rozental, A. Wnuk, A. Ulyashin, I. Antonova, V. Popov, R. Job
{"title":"Effect of pressure treatment on electrical properties of hydrogen-doped silicon","authors":"B. Surma, A. Misiuk, J. Jun, M. Rozental, A. Wnuk, A. Ulyashin, I. Antonova, V. Popov, R. Job","doi":"10.1109/ASDAM.1998.730163","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730163","url":null,"abstract":"Annealing of CZ-Si at 450/spl deg/C under enhanced argon pressure (HP) results in significant increase of electron concentration. FTIR measurements confirmed that enhanced double thermal donors (TDD) generation in CZ-Si is responsible for this phenomenon. In hydrogenated (etched in hydrogen plasma or implanted by hydrogen) silicon samples, annealed at 450/spl deg/C-HP, it was slated marked enhancement of the TDD generation rate during first two hours of annealing. It can mean that hydrogen acts as catalyst in formation of small oxygen clusters at HP. The role of HP in enhancement of TDD creation during annealing at 450/spl deg/C was stated to be of primary importance also for hydrogen doped silicon.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"591 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130152966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On capacitance of (U/sub a/=300 V) ionized cluster beam deposited Pb/p-Si[100] Schottky junction 利用(U/sub /=300 V)电离束的电容沉积Pb/p-Si[100]肖特基结
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730181
B. Cvikl, D. Korosak
{"title":"On capacitance of (U/sub a/=300 V) ionized cluster beam deposited Pb/p-Si[100] Schottky junction","authors":"B. Cvikl, D. Korosak","doi":"10.1109/ASDAM.1998.730181","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730181","url":null,"abstract":"The room temperature C-V characteristics, exhibiting the distinct maxima around the reverse biased voltage, U/sub r/, of ionized cluster beam deposited (ICB) metal/p-Si[100], metal=Pb and Ag, Schottky junctions, are interpreted in terms of the model of metal/metal-enriched interlayer/p-Si substrate structure. It is shown, that the resultant depletion layer capacitance, C, of such a structure, when derived by incorporating the (assumed biased voltage independent) excess interface charge density, /spl sigma/, in conjunction with the spatially confined deep lying metal impurity levels within the metal enriched semiconductor region, could successfully describe the low frequency C-V data, as measured on these ICB U/sub a/=300 V Schottky junctions.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123600733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pattern formation on the compound semiconductor surface after selective electrochemical etching 选择性电化学蚀刻后化合物半导体表面图案的形成
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730161
Á. Nemcsics, L. Dobis, B. Kovács, J. Mojzes
{"title":"Pattern formation on the compound semiconductor surface after selective electrochemical etching","authors":"Á. Nemcsics, L. Dobis, B. Kovács, J. Mojzes","doi":"10.1109/ASDAM.1998.730161","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730161","url":null,"abstract":"In this paper we investigate the pattern formation of the GaAs and InP surface after electrochemical layer removal by different aqueous electrolytes. The investigation of the surface was carried out using SEM. Under certain etching conditions the surface morphology showed fractal behaviour. The fractal properties were established using the box counting method. The pictures of surface patterns were digitised and analysed using high resolution bitmap. The fractal dimension depends the semiconductor material electrolyte and condition of etching too.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122124479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiO/sub 2/ film formation and electrical properties of InP MIS structures InP MIS结构SiO/ sub2 /膜的形成及电学性能
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730189
S. Malyshev, N. Babushkina
{"title":"SiO/sub 2/ film formation and electrical properties of InP MIS structures","authors":"S. Malyshev, N. Babushkina","doi":"10.1109/ASDAM.1998.730189","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730189","url":null,"abstract":"The purpose of this work is to investigate the influence of the SiO2film deposition conditions on the charge properties of the Me-SiOrn-InP (100) MIS sr'ructures. SiO2Jilms have been formed on n-type InP (100) substrates (N = 10'6-1'0'7 ~ m ~ ) by chemical vapor deposition (CVD) using pyrolysis of telraethoxysilane (TKOs) in an 02/N2flow at the 30O-35O0C. The deposition rate was 10-200 n , d h . It is shown that the efective surface state charge Qss and hysteresis of C-V characteristics in the MIS structures to a large extent depend on the SiO2filnz dkposition rate. In the MIS structures treated in the (iVH4)2Sx solulion the lowest Qss (SlO\" cm-t), Ni, (-10\" cm\"eV') and C-V hysteresis (<0.3 were obtained at th(e d,, = 70 nm and the 130 nndh deposition rate.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128758001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parameter extraction and optimization for new industry standard VBIC model 新工业标准VBIC模型的参数提取与优化
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730178
X. Cao, J. McMacken, K. Stiles, P. Layman, J. Liou, A. Sun, S. Moinian
{"title":"Parameter extraction and optimization for new industry standard VBIC model","authors":"X. Cao, J. McMacken, K. Stiles, P. Layman, J. Liou, A. Sun, S. Moinian","doi":"10.1109/ASDAM.1998.730178","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730178","url":null,"abstract":"A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper seeks to develop an accurate, comprehensive and efficient methodology to extract the parameters for the VBIC using the parameters extracted will be compared under various bias operation conditions.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127309986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Manganese-based magnetic compounds grown on III-V semiconductors: growth technique, magnetic properties, and applications 在III-V型半导体上生长的锰基磁性化合物:生长技术、磁性和应用
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730186
H. Akinaga, S. Miyanishi, A. Asamitsu, W. Van Roy, L. Kuo, Y. Tomioka, J. De Boeck, G. Borghs
{"title":"Manganese-based magnetic compounds grown on III-V semiconductors: growth technique, magnetic properties, and applications","authors":"H. Akinaga, S. Miyanishi, A. Asamitsu, W. Van Roy, L. Kuo, Y. Tomioka, J. De Boeck, G. Borghs","doi":"10.1109/ASDAM.1998.730186","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730186","url":null,"abstract":"In this paper we firstly discuss briefly developments in the field of ferromagnetic/semiconductor hybrid devices. We will emphasize the potential of the use of epitaxial technique to tailor the magnetic properties and to improve potential device characteristics. We will describe further the advantage of Molecular Beam Epitaxy (MBE) to produce excellent heterostructure interfaces between ferromagnetic and semiconductor layers. As a prime example of how magnetic properties can be controlled by MBE we describe our recent results on the epitaxy of ferromagnetic Mn/sub 2/Sb on GaAs. We show the substrate temperature dependence of the crystallographic and magnetic properties of [001] Mn/sub 2/Sb films grown on [001] GaAs substrates. The Mn/sub 2/Sb epitaxial film grown at 150/spl deg/C shows high quality and single crystallinity of the film with an automatically flat Mn/sub 2/Sb/GaAs heterointerface. The small coercive field and the large magneto-optical Kerr effect are very promising for ferromagnetic/semiconductor hybrid devices. The correlation between the crystallographic and magnetic properties is discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125497688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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