Pattern formation on the compound semiconductor surface after selective electrochemical etching

In this paper we investigate the pattern formation of the GaAs and InP surface after electrochemical layer removal by different aqueous electrolytes. The investigation of the surface was carried out using SEM. Under certain etching conditions the surface morphology showed fractal behaviour. The fractal properties were established using the box counting method. The pictures of surface patterns were digitised and analysed using high resolution bitmap. The fractal dimension depends the semiconductor material electrolyte and condition of etching too.