新工业标准VBIC模型的参数提取与优化

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730178

X. Cao, J. McMacken, K. Stiles, P. Layman, J. Liou, A. Sun, S. Moinian

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引用次数: 10

摘要

一种名为VBIC的新型双极晶体管模型最近被开发出来，它很可能取代Gummel-Poon模型，成为新的工业标准双极晶体管模型。本文旨在开发一种准确、全面和高效的方法来提取VBIC的参数，并将提取的参数在不同的偏置操作条件下进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Parameter extraction and optimization for new industry standard VBIC model

A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper seeks to develop an accurate, comprehensive and efficient methodology to extract the parameters for the VBIC using the parameters extracted will be compared under various bias operation conditions.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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