Effect of pressure treatment on electrical properties of hydrogen-doped silicon

Abstract

Annealing of CZ-Si at 450/spl deg/C under enhanced argon pressure (HP) results in significant increase of electron concentration. FTIR measurements confirmed that enhanced double thermal donors (TDD) generation in CZ-Si is responsible for this phenomenon. In hydrogenated (etched in hydrogen plasma or implanted by hydrogen) silicon samples, annealed at 450/spl deg/C-HP, it was slated marked enhancement of the TDD generation rate during first two hours of annealing. It can mean that hydrogen acts as catalyst in formation of small oxygen clusters at HP. The role of HP in enhancement of TDD creation during annealing at 450/spl deg/C was stated to be of primary importance also for hydrogen doped silicon.